BSY56

80V,750mA,800mW Through-Hole Transistor-Small Signal (<=1A) NPN High Current

Case Type: TO-39

Base-Emitter Saturation Voltage (VBE(SAT))
1.3 V
Collector-Base Breakdown Voltage (BVCBO)
120 V
Collector-Base Cutoff Current (ICBO)
10 nA
Collector-Base Cutoff Current (ICBO)
10 µA
Collector-Base Voltage (VCBO)
120 V
Collector-Emitter Breakdown Voltage (BVCEO)
80 V
Collector-Emitter Saturation Voltage (VCE(SAT))
600 mV
Collector-Emitter Voltage (VCEO)
80 V
Continuous Collector Current (IC)
750 mA
Current Gain-Bandwidth Product (fT)
100 MHz
DC Current Gain (hFE)
35
DC Current Gain (hFE)
75
DC Current Gain (hFE)
100 — 300
Emitter-Base Breakdown Voltage (BVEBO)
7 V
Emitter-Base Cutoff Current (IEBO)
10 nA
Emitter-Base Voltage (VEBO)
7 V
Input Capacitance (Cib)
23 pF
Input Impedance Common Emitter (hie)
1.6 — 9 Ω
Junction Temperature (Tj)
-65 — 200 °C
Noise Figure (NF)
6 dB
Output Admittance Common Emitter (hoe)
3 — 10 µS
Output Capacitance (Cob)
10 pF
Power Dissipation (PD)
800 mW
Power Dissipation (PD)
3 W
Small Signal Current Gain (hfe)
60 — 250
Storage Temperature (Tstg)
-65 — 200 °C
Voltage Feedback Ratio Common Emitter (hre)
0.3 x10-3

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
BSY56 Box@500 Active 80V,750mA,800mW Through-Hole Transistor-Small Signal (<=1A) NPN High Current EAR99 8541.21.0075 PBFREE

Resources

Analytical Test Report:Bond Wire Analytical Test Report
Analytical Test Report:Cap Analytical Test Report
Analytical Test Report:Header Analytical Test Report
Analytical Test Report:Header Assembly Analytical Test Report
Analytical Test Report:Pure Tin Solder Analytical Test Report
LSSGP067.PDF Device Datasheet
Material Composition:TO-39 Material Composition
Package Detail Document:TO-39 Package Detail Document
Product Reliability Data:TO-39 Package Reliability Product Reliability Data

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