BU408
200V,7A,60W Through-Hole Transistor-Bipolar Power (>1A) NPN High Voltage
Case Type: TO-220
Technical Specifications
Similar Products with Selected SpecificationsTest Conditions
IC = 6 A
IB = 1.2 A
Test Conditions
VCE = 400 V
Test Conditions
VCE = 250 V
Test Conditions
VCE = 250 V
TC = 150 °C
Test Conditions
IC = 6 A
IB = 1.2 A
Test Conditions
VCE = 10 V
IC = 500 mA
f = 1 MHz
Test Conditions
VEB = 6 V
Test Conditions
VCC = 40 V
IC = 6 A
IB1 = 1.2 A
IB2 = 1.2 A
Test Conditions
VCB = 10 V
f = 1 MHz
Test Conditions
VCE = 10 V
tp = 1 s
Ordering
| Part | Package | Buy | Status | Description | ECCN Code | HTS Code | Termination |
|---|---|---|---|---|---|---|---|
| BU408 | Sleeve@50 | Discontinued | 200V,7A,60W Through-Hole Transistor-Bipolar Power (>1A) NPN High Voltage | EAR99 | 8541.29.0095 | TIN |
Resources
| Item | Type |
|---|---|
| No matching documents found. | |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Leadframe | Analytical Test Report |
| Analytical Test Report:Sn Plating | Analytical Test Report |
| Analytical Test Report:Tin Plating | Analytical Test Report |
| BU406-408.PDF | Device Datasheet |
| Material Composition:TO-220 | Material Composition |
| Package Detail Document:TO-220 | Package Detail Document |
| Product EOL Notice:Power transistors bare die and | Product EOL Notice |
| Product Reliability Data:TO-220 Package Reliability | Product Reliability Data |
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