BUW35
400V,10A,125W Through-Hole Transistor-Bipolar Power (>1A) NPN High Voltage
Case Type: TO-3
Technical Specifications
Similar Products with Selected SpecificationsTest Conditions
IC = 5 A
IB = 1 A
Test Conditions
IC = 8 A
IB = 2.5 A
Test Conditions
IC = 100 mA
Test Conditions
VCE = 800 V
Test Conditions
VCE = 800 V
TC = 125 °C
Test Conditions
IC = 5 A
IB = 1 A
Test Conditions
IC = 8 A
IB = 2.5 A
Test Conditions
VCE = 5 V
IC = 1 A
Test Conditions
VEB = 7 V
Test Conditions
VCC = 250 V
IC = 5 A
IB1 = 1 A
IB2 = 1 A
Test Conditions
VCC = 250 V
IC = 5 A
IB1 = 1 A
Ordering
| Part | Package | Buy | Status | Description | ECCN Code | HTS Code | Termination |
|---|---|---|---|---|---|---|---|
| BUW35 | Sleeve@20 | Discontinued | 400V,10A,125W Through-Hole Transistor-Bipolar Power (>1A) NPN High Voltage | EAR99 | 8541.29.0095 | PBFREE |
Resources
| Item | Type |
|---|---|
| No matching documents found. | |
| Analytical Test Report:Cap and Assembly | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Leads | Analytical Test Report |
| Analytical Test Report:Sn Plating | Analytical Test Report |
| BUW34_SERIES.PDF | Device Datasheet |
| Material Composition:TO-3 | Material Composition |
| Package Detail Document:TO-3 | Package Detail Document |
| Product EOL Notice:Power transistors bare die and | Product EOL Notice |
| Product Reliability Data:TO-3 Package Reliability | Product Reliability Data |
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Design Support
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