BUY49S

200V,3A,1W Through-Hole Transistor-Bipolar Power (>1A) NPN High Voltage

Case Type: TO-39

Base-Emitter Saturation Voltage (VBE(SAT))
1.1 V
Collector-Base Breakdown Voltage (BVCBO)
250 V
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Base Cutoff Current (ICBO)
50 µA
Collector-Base Voltage (VCBO)
250 V
Collector-Emitter Breakdown Voltage (BVCEO)
200 V
Collector-Emitter Saturation Voltage (VCE(SAT))
200 mV
Collector-Emitter Voltage (VCEO)
200 V
Continuous Collector Current (IC)
3 A
Current Gain-Bandwidth Product (fT)
50 MHz
DC Current Gain (hFE)
40
DC Current Gain (hFE)
40
DC Current Gain (hFE)
16
Emitter-Base Breakdown Voltage (BVEBO)
6 V
Emitter-Base Voltage (VEBO)
6 V
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
30 pF
Peak Collector Current (ICM)
5 A
Power Dissipation (PD)
1 W
Second Breakdown Collector Current (Is/b)
200 mA
Storage Temperature (Tstg)
-65 — 200 °C
Thermal Resistance Junction-Ambient (ΘJA)
175 °C/W
Thermal Resistance Junction-Case (ΘJC)
15 °C/W
Turn Off Time (toff)
1 µs
Turn On Time (ton)
300 ns

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
BUY49S Box@500 Active 200V,3A,1W Through-Hole Transistor-Bipolar Power (>1A) NPN High Voltage EAR99 8541.29.0075 PBFREE

Resources

Analytical Test Report:Bond Wire Analytical Test Report
Analytical Test Report:Cap Analytical Test Report
Analytical Test Report:Header Analytical Test Report
Analytical Test Report:Header Assembly Analytical Test Report
Analytical Test Report:Pure Tin Solder Analytical Test Report
BUY49S.PDF Device Datasheet
Material Composition:TO-39 Material Composition
Package Detail Document:TO-39 Package Detail Document
Product Reliability Data:TO-39 Package Reliability Product Reliability Data
Spice Model:Spice Model BUY49S Spice Model

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AEM stands ready to assist with your latest design endeavors as your trusted partner.

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  • Application and design sample kits
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