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CEN-U10

300V,500mA,1.75W Through-Hole Transistor-Small Signal (<=1A) NPN High Voltage

Case Type: TO-202

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Technical Specifications

Similar Products with Selected Specifications
Base-Emitter Saturation Voltage (VBE(SAT))
800 mV
Collector-Base Breakdown Voltage (BVCBO)
300 V
Collector-Base Cutoff Current (ICBO)
200 nA
Collector-Base Voltage (VCBO)
300 V
Collector-Emitter Breakdown Voltage (BVCEO)
300 V
Collector-Emitter Saturation Voltage (VCE(SAT))
1.5 V
Collector-Emitter Voltage (VCEO)
300 V
Continuous Collector Current (IC)
500 mA
Current Gain-Bandwidth Product (fT)
45 MHz
DC Current Gain (hFE)
25
DC Current Gain (hFE)
40
DC Current Gain (hFE)
40
Emitter-Base Breakdown Voltage (BVEBO)
6 V
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Voltage (VEBO)
6 V
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
3 pF
Power Dissipation (PD)
1.75 W
Power Dissipation (PD)
10 W
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient (ΘJA)
70 °C/W
Thermal Resistance Junction-Case (ΘJC)
12.5 °C/W

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CEN-U10 Sleeve@50 Discontinued 300V,500mA,1.75W Through-Hole Transistor-Small Signal (<=1A) NPN High Voltage EAR99 8541.29.0065 PBFREE

Resources

Item Type
Analytical Test Report:Bond Wire Analytical Test Report
Analytical Test Report:Green Epoxy Molding Compound Analytical Test Report
Analytical Test Report:Lead Frame Analytical Test Report
Analytical Test Report:Tin Plating Analytical Test Report
CEN-U10.PDF Device Datasheet
Material Composition:TO-202 Material Composition
Package Detail Document:TO-202 Package Detail Document
Product EOL Notice:All Product in the TO-202 and Product EOL Notice
Product Reliability Data:TO-202 Package Reliability Product Reliability Data