CEN-U10

300V,500mA,1.75W Through-Hole Transistor-Small Signal (<=1A) NPN High Voltage

Case Type: TO-202

Base-Emitter Saturation Voltage (V_BE(SAT))

800 mV

Collector-Base Breakdown Voltage (BV_CBO)

300 V

Collector-Base Cutoff Current (I_CBO)

200 nA

Collector-Base Voltage (V_CBO)

300 V

Collector-Emitter Breakdown Voltage (BV_CEO)

300 V

Collector-Emitter Saturation Voltage (V_CE(SAT))

1.5 V

Collector-Emitter Voltage (V_CEO)

300 V

Continuous Collector Current (I_C)

500 mA

Current Gain-Bandwidth Product (f_T)

45 MHz

DC Current Gain (h_FE)

Emitter-Base Breakdown Voltage (BV_EBO)

6 V

Emitter-Base Cutoff Current (I_EBO)

100 nA

Emitter-Base Voltage (V_EBO)

6 V

Junction Temperature (T_j)

-65 — 150 °C

Output Capacitance (C_ob)

3 pF

Power Dissipation (P_D)

1.75 W

Power Dissipation (P_D)

10 W

Storage Temperature (T_stg)

-65 — 150 °C

Thermal Resistance Junction-Ambient (Θ_JA)

70 °C/W

Thermal Resistance Junction-Case (Θ_JC)

12.5 °C/W

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
CEN-U10	Sleeve@50		Discontinued	300V,500mA,1.75W Through-Hole Transistor-Small Signal (<=1A) NPN High Voltage	EAR99	8541.29.0075	PBFREE


Item	Type
No matching documents found.
CEN-U10.PDF	Device Datasheet
Package Detail Document:TO-237	Package Detail Document
Product EOL Notice:TO-237 Transisitors	Product EOL Notice