CEN-U51A

40V,2A,1.75W Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/Switch

Case Type: TO-202

Base-Emitter On Voltage (V_BE(ON))

1.2 V

Collector-Base Breakdown Voltage (BV_CBO)

50 V

Collector-Base Cutoff Current (I_CBO)

100 nA

Collector-Base Voltage (V_CBO)

50 V

Collector-Emitter Breakdown Voltage (BV_CEO)

40 V

Collector-Emitter Saturation Voltage (V_CE(SAT))

700 mV

Collector-Emitter Voltage (V_CEO)

40 V

Continuous Collector Current (I_C)

2 A

Current Gain-Bandwidth Product (f_T)

50 MHz

DC Current Gain (h_FE)

Emitter-Base Breakdown Voltage (BV_EBO)

5 V

Emitter-Base Cutoff Current (I_EBO)

100 nA

Emitter-Base Voltage (V_EBO)

5 V

Junction Temperature (T_j)

-65 — 150 °C

Output Capacitance (C_ob)

30 pF

Power Dissipation (P_D)

1.75 W

Power Dissipation (P_D)

10 W

Storage Temperature (T_stg)

-65 — 150 °C

Thermal Resistance Junction-Ambient (Θ_JA)

71.4 °C/W

Thermal Resistance Junction-Case (Θ_JC)

12.5 °C/W

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
CEN-U51A	Sleeve@50		Discontinued	40V,2A,1.75W Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/Switch	EAR99	8541.29.0075	PBFREE


Item	Type
No matching documents found.
LSSGP089.PDF	Device Datasheet
Package Detail Document:TO-237	Package Detail Document
Product EOL Notice:TO-237 Transisitors	Product EOL Notice