CEN-U55

60V,2A,1.75W Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/Switch

Case Type: TO-202

Base-Emitter On Voltage (VBE(ON))
1.2 V
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Base Voltage (VCBO)
60 V
Collector-Emitter Breakdown Voltage (BVCEO)
60 V
Collector-Emitter Saturation Voltage (VCE(SAT))
500 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
350 mV
Collector-Emitter Voltage (VCEO)
60 V
Continuous Collector Current (IC)
2 A
Current Gain-Bandwidth Product (fT)
50 MHz
DC Current Gain (hFE)
80
DC Current Gain (hFE)
50
DC Current Gain (hFE)
20
Emitter-Base Cutoff Current (IEBO)
100 µA
Emitter-Base Voltage (VEBO)
4 V
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
30 pF
Power Dissipation (PD)
1.75 W
Power Dissipation (PD)
10 W
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient (ΘJA)
71.4 °C/W
Thermal Resistance Junction-Case (ΘJC)
12.5 °C/W

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CEN-U55 Sleeve@50 Discontinued 60V,2A,1.75W Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/Switch EAR99 8541.29.0075 PBFREE

Resources

CEN-U05-07_55-57.PDF Device Datasheet
Package Detail Document:TO-237 Package Detail Document
Product EOL Notice:TO-237 Transisitors Product EOL Notice

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