CM4957

25V,30mA,200mW Through-Hole Transistor-Small Signal (<=1A) PNP RF Oscillator

Case Type: TO-72

Amplifier Power Gain (Gpe)
17 — 25 dB
Collector-Base Breakdown Voltage (BVCBO)
30 V
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Base Voltage (VCBO)
30 V
Collector-Emitter Breakdown Voltage (BVCEO)
25 V
Collector-Emitter Voltage (VCEO)
25 V
Continuous Collector Current (IC)
30 mA
Current Gain-Bandwidth Product (fT)
1200 — 2500 MHz
DC Current Gain (hFE)
20 — 150
Emitter-Base Breakdown Voltage (BVEBO)
3 V
Emitter-Base Voltage (VEBO)
3 V
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
2 pF

(1.6 pF Typical)

Power Dissipation (PD)
200 mW
Power Dissipation (PD)
300 mW
Small Signal Current Gain (hfe)
20 — 200
Storage Temperature (Tstg)
-65 — 200 °C

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CM4957 Box@2,000 Discontinued 25V,30mA,200mW Through-Hole Transistor-Small Signal (<=1A) PNP RF Oscillator EAR99 8541.21.0075 PBFREE

Resources

Analytical Test Report:Aluminum Wire Analytical Test Report
Analytical Test Report:Bond Wire Analytical Test Report
Analytical Test Report:Epoxy Adhesive Analytical Test Report
Analytical Test Report:Pure Tin Solder Analytical Test Report
CM4957.PDF Device Datasheet
Material Composition:TO-72 Material Composition
Package Detail Document:TO-72 Package Detail Document
Product EOL Notice:RF TRANSISTOR DIE Product EOL Notice
Product Reliability Data:TO-72 Package Reliability Product Reliability Data
Spice Model:Spice Model CM4957 Spice Model

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AEM stands ready to assist with your latest design endeavors as your trusted partner.

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