CMXT3946

Surface mount Transistor-Small Signal (<=1A) 40V Dual NPN&40V PNP General Purpose Amplifier

Case Type: SOT-26

Base-Emitter Saturation Voltage (VBE(SAT))
650 — 850 mV
Base-Emitter Saturation Voltage (VBE(SAT))
950 mV
Base-Emitter Saturation Voltage (VBE(SAT))
650 — 850 mV
Base-Emitter Saturation Voltage (VBE(SAT))
950 mV
Collector-Base Breakdown Voltage (BVCBO)
40 V
Collector-Base Breakdown Voltage (BVCBO)
60 V
Collector-Base Voltage (VCBO)
60 V
Collector-Base Voltage (VCBO)
40 V
Collector-Emitter Breakdown Voltage (BVCEO)
40 V
Collector-Emitter Breakdown Voltage (BVCEO)
40 V
Collector-Emitter Cutoff Current (ICEV)
50 nA
Collector-Emitter Cutoff Current (ICEV)
50 nA
Collector-Emitter Saturation Voltage (VCE(SAT))
200 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
300 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
250 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
400 mV
Collector-Emitter Voltage (VCEO)
40 V
Collector-Emitter Voltage (VCEO)
40 V
Continuous Collector Current (IC)
200 mA
Current Gain-Bandwidth Product (fT)
300 MHz
Current Gain-Bandwidth Product (fT)
250 MHz
DC Current Gain (hFE)
40
DC Current Gain (hFE)
70
DC Current Gain (hFE)
100 — 300
DC Current Gain (hFE)
60
DC Current Gain (hFE)
30
DC Current Gain (hFE)
60
DC Current Gain (hFE)
80
DC Current Gain (hFE)
100 — 300
DC Current Gain (hFE)
60
DC Current Gain (hFE)
30
Delay Time (td)
35 ns
Delay Time (td)
35 ns
Emitter-Base Breakdown Voltage (BVEBO)
6 V
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Voltage (VEBO)
6 V
Emitter-Base Voltage (VEBO)
5 V
Fall Time (tf)
50 ns
Fall Time (tf)
75 ns
Input Capacitance (Cib)
12 pF
Input Capacitance (Cib)
12 pF
Input Impedance Common Emitter (hie)
1 — 10 kΩ
Input Impedance Common Emitter (hie)
2 — 12 kΩ
Junction Temperature (Tj)
-65 — 150 °C
Noise Figure (NF)
5 dB
Noise Figure (NF)
4 dB
Output Admittance Common Emitter (hoe)
1 — 40 µS
Output Admittance Common Emitter (hoe)
3 — 60 µS
Output Capacitance (Cob)
4 pF
Output Capacitance (Cob)
4.5 pF
Power Dissipation (PD)
350 mW
Rise Time (tr)
35 ns
Rise Time (tr)
35 ns
Small Signal Current Gain (hfe)
100 — 400
Small Signal Current Gain (hfe)
100 — 400
Storage Temperature (Tstg)
-65 — 150 °C
Storage Time (ts)
200 ns
Storage Time (ts)
225 ns
Thermal Resistance Junction-Ambient (ΘJA)
357 °C/W
Voltage Feedback Ratio Common Emitter (hre)
0.05 — 0.8 x10-3
Voltage Feedback Ratio Common Emitter (hre)
0.01 — 1 x10-3

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CMXT3946 BK Box@3,500 Active Surface mount Transistor-Small Signal (<=1A) 40V Dual NPN&40V PNP General Purpose Amplifier EAR99 8541.21.0075 PBFREE
CMXT3946 TR Tape & Reel@3,000 Active Surface mount Transistor-Small Signal (<=1A) 40V Dual NPN&40V PNP General Purpose Amplifier EAR99 8541.21.0075 LEAD or TIN

Resources

Analytical Test Report:Green Epoxy Molding Compound Analytical Test Report
Analytical Test Report:Green Epoxy Molding Compound Analytical Test Report
Analytical Test Report:Henkel 84-1LMISR4 Analytical Test Report
Analytical Test Report:Leadframe Analytical Test Report
CMXT3946.PDF Device Datasheet
Material Composition:SOT-26 Material Composition
Package Detail Document:SOT-26 Package Detail Document
Process Change Notice:SOT-26 CASE Process Change Notice
Product Reliability Data:SOT-26 Package Reliability Product Reliability Data
Spice Model:Spice Model CMXT3946_NPN Spice Model
Spice Model:Spice Model CMXT3946_PNP Spice Model
Step File 3D Object:SOT-26 Step File 3D Object

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  • Supply management (Customer portals)
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AEM stands ready to assist with your latest design endeavors as your trusted partner.

  • Free quick ship samples (2nd day air)
  • Online technical data and parametric search
  • SPICE models
  • Custom electrical curves
  • Environmental regulation compliance
  • Customer specific screening
  • Up-screening capabilities
  • Special wafer diffusions
  • PbSn plating options
  • Package details
  • Application notes
  • Application and design sample kits
  • Custom product and package development