CYT5551D

160V,600mA,2W Surface mount Transistor-Small Signal (<=1A) Dual NPN High Voltage

Case Type: SOT-228

Base-Emitter Saturation Voltage (VBE(SAT))
1 V
Base-Emitter Saturation Voltage (VBE(SAT))
1 V
Collector-Base Breakdown Voltage (BVCBO)
180 V
Collector-Base Cutoff Current (ICBO)
50 nA
Collector-Base Cutoff Current (ICBO)
50 µA
Collector-Base Voltage (VCBO)
180 V
Collector-Emitter Breakdown Voltage (BVCEO)
160 V
Collector-Emitter Saturation Voltage (VCE(SAT))
0.15 V
Collector-Emitter Saturation Voltage (VCE(SAT))
0.2 V
Collector-Emitter Voltage (VCEO)
160 V
Continuous Collector Current (IC)
600 mA
Current Gain-Bandwidth Product (fT)
100 — 300 MHz
DC Current Gain (hFE)
80
DC Current Gain (hFE)
80 — 250
DC Current Gain (hFE)
30
Emitter-Base Breakdown Voltage (BVEBO)
6 V
Emitter-Base Cutoff Current (IEBO)
50 nA
Emitter-Base Voltage (VEBO)
6 V
Input Capacitance (Cib)
20 pF
Junction Temperature (Tj)
-65 — 150 °C
Noise Figure (NF)
8 dB
Output Capacitance (Cob)
6 pF
Power Dissipation (PD)
2 W
Small Signal Current Gain (hfe)
50 — 200
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient (ΘJA)
62.5 °C/W

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CYT5551D BK Box@350 Discontinued 160V,600mA,2W Surface mount Transistor-Small Signal (<=1A) Dual NPN High Voltage EAR99 8541.29.0075 PBFREE
CYT5551D TR Tape & Reel@1,000 Discontinued 160V,600mA,2W Surface mount Transistor-Small Signal (<=1A) Dual NPN High Voltage EAR99 8541.29.0075 PBFREE

Resources

CYT5551D.PDF Device Datasheet
Package Detail Document:SOT-228 Package Detail Document
Process Change Notice:CP316V REPLACED BY CP336V Process Change Notice
Product EOL Notice:BLANKET PDN-ALL OTHER PRODUCTS Product EOL Notice