D41D1

30V,1A,6.25W Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/Switch

Case Type: TO-202

Base-Emitter Saturation Voltage (VBE(SAT))
1.5 V
Collector-Emitter Breakdown Voltage (BVCEO)
30 V
Collector-Emitter Cutoff Current (ICES)
100 nA
Collector-Emitter Saturation Voltage (VCE(SAT))
500 mV
Collector-Emitter Voltage (VCES)
45 V
Collector-Emitter Voltage (VCEO)
30 V
Continuous Collector Current (IC)
1 A
DC Current Gain (hFE)
50 — 150
DC Current Gain (hFE)
10
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Voltage (VEBO)
5 V
Junction Temperature (Tj)
-65 — 150 °C
Peak Collector Current (ICM)
1.5 A
Power Dissipation (PD)
6.25 W
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Case (ΘJC)
20 °C/W

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
D41D1 Sleeve@50 Discontinued 30V,1A,6.25W Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/Switch EAR99 8541.29.0095 PBFREE

Resources

Analytical Test Report:Bond Wire Analytical Test Report
Analytical Test Report:Green Epoxy Molding Compound Analytical Test Report
Analytical Test Report:Lead Frame Analytical Test Report
Analytical Test Report:Tin Plating Analytical Test Report
D41D_SERIES.PDF Device Datasheet
Material Composition:TO-202 Material Composition
Package Detail Document:TO-202 Package Detail Document
Product EOL Notice:All Product in the TO-202 and Product EOL Notice
Product Reliability Data:TO-202 Package Reliability Product Reliability Data

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