MD7003

40V,50mA,550mW Through-Hole Transistor-Small Signal (<=1A) Dual PNP Low Noise Amplifier

Case Type: TO-78

Base-Emitter Saturation Voltage (VBE(SAT))
1 V
Collector-Base Breakdown Voltage (BVCBO)
50 V
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Base Voltage (VCBO)
50 V
Collector-Emitter Breakdown Voltage (BVCEO)
40 V
Collector-Emitter Saturation Voltage (VCE(SAT))
350 mV
Collector-Emitter Voltage (VCEO)
40 V
Continuous Collector Current (IC)
50 mA
Current Gain-Bandwidth Product (fT)
200 MHz
DC Current Gain (hFE)
40
DC Current Gain (hFE)
50
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Voltage (VEBO)
5 V
Input Capacitance (Cib)
8 pF
Junction Temperature (Tj)
-65 — 200 °C
Noise Figure (NF)
2 dB
Output Capacitance (Cob)
6 pF
Power Dissipation (PD)
550 mW
Power Dissipation (PD)
600 mW
Power Dissipation (PD)
1.4 W
Power Dissipation (PD)
2 W
Storage Temperature (Tstg)
-65 — 200 °C

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
MD7003 Box@100 Discontinued 40V,50mA,550mW Through-Hole Transistor-Small Signal (<=1A) Dual PNP Low Noise Amplifier EAR99 8541.21.0075 PBFREE

Resources

LSSGP071.PDF Device Datasheet
Material Composition:TO-78 Material Composition
Package Detail Document:TO-78 Package Detail Document
Product EOL Notice:TO-78 CASE Product EOL Notice

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