MD8003

60V,30mA,575mW Through-Hole Transistor-Small Signal (<=1A) Dual NPN Low Noise Amplifier

Case Type: TO-78

Base-Emitter On Voltage Matching (|VBE1-VBE2|)
15 mV
Collector-Base Cutoff Current (ICBO)
50 nA
Collector-Emitter Breakdown Voltage (BVCEO)
60 V
Collector-Emitter Voltage (VCEO)
60 V
Continuous Collector Current (IC)
30 mA
Current Gain-Bandwidth Product (fT)
240 MHz
DC Current Gain (hFE)
100
Emitter-Base Cutoff Current (IEBO)
50 nA
Input Capacitance (Cib)
1.9 pF
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
20 pF
Power Dissipation (PD)
575 mW
Power Dissipation (PD)
625 mW
Power Dissipation (PD)
1.8 W
Power Dissipation (PD)
2.5 W
Storage Temperature (Tstg)
-65 — 200 °C
Thermal Resistance Junction-Ambient (ΘJA)
300 °C/W
Thermal Resistance Junction-Ambient (ΘJA)
280 °C/W
Thermal Resistance Junction-Case (ΘJC)
97.2 °C/W
Thermal Resistance Junction-Case (ΘJC)
70 °C/W

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
MD8003 Box@100 Discontinued 60V,30mA,575mW Through-Hole Transistor-Small Signal (<=1A) Dual NPN Low Noise Amplifier EAR99 8541.21.0075 PBFREE

Resources

Material Composition:TO-78 Material Composition
MD8001-8003.PDF Device Datasheet
Package Detail Document:TO-78 Package Detail Document
Product EOL Notice:TO-78 CASE Product EOL Notice

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