MD918B

15V,50mA,550mW Through-Hole Transistor-Small Signal (<=1A) Dual NPN General Purpose Amplifier/Switch

Case Type: TO-78

Base-Emitter On Voltage Matching (|VBE1-VBE2|)
10 mV
Base-Emitter Saturation Voltage (VBE(SAT))
900 mV
B-E Voltage Differential Change Due To Temperature (Δ(VBE1-VBE2))
20 µV/°C
Collector-Base Breakdown Voltage (BVCBO)
30 V
Collector-Base Cutoff Current (ICBO)
10 nA
Collector-Base Cutoff Current (ICBO)
1 µA
Collector-Base Voltage (VCBO)
30 V
Collector-Emitter Breakdown Voltage (BVCEO)
15 V
Collector-Emitter Saturation Voltage (VCE(SAT))
200 mV
Collector-Emitter Voltage (VCEO)
15 V
Continuous Collector Current (IC)
50 mA
Current Gain-Bandwidth Product (fT)
600 MHz
DC Current Gain (hFE)
50
DC Current Gain Matching (hFE1/hFE2)
0.8 — 1
Emitter-Base Breakdown Voltage (BVEBO)
3 V
Emitter-Base Voltage (VEBO)
3 V
Input Capacitance (Cib)
2 pF
Junction Temperature (Tj)
-65 — 200 °C
Noise Figure (NF)
6 dB
Output Capacitance (Cob)
1.7 pF
Power Dissipation (PD)
550 mW
Power Dissipation (PD)
600 mW
Power Dissipation (PD)
1.4 W
Power Dissipation (PD)
2 W
Storage Temperature (Tstg)
-65 — 200 °C
Thermal Resistance Junction-Ambient (ΘJA)
318 °C/W
Thermal Resistance Junction-Ambient (ΘJA)
292 °C/W
Thermal Resistance Junction-Case (ΘJC)
125 °C/W
Thermal Resistance Junction-Case (ΘJC)
87.5 °C/W

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
MD918B Box@100 Discontinued 15V,50mA,550mW Through-Hole Transistor-Small Signal (<=1A) Dual NPN General Purpose Amplifier/Switch EAR99 8541.21.0075 PBFREE

Resources

Material Composition:TO-78 Material Composition
MD918-AB.PDF Device Datasheet
Package Detail Document:TO-78 Package Detail Document
Product EOL Notice:TO-78 CASE Product EOL Notice

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