MJ420

250V,100mA,800mW Through-Hole Transistor-Small Signal (<=1A) NPN High Voltage

Case Type: TO-39

Base-Emitter On Voltage (V_BE(ON))

1 V

Collector-Base Breakdown Voltage (BV_CBO)

275 V

Collector-Base Cutoff Current (I_CBO)

100 µA

Collector-Base Voltage (V_CBO)

275 V

Collector-Emitter Breakdown Voltage (BV_CEO)

250 V

Collector-Emitter Cutoff Current (I_CEO)

1 mA

Collector-Emitter Saturation Voltage (V_CE(SAT))

5 V

Collector-Emitter Voltage (V_CEO)

250 V

Continuous Base Current (I_B)

100 mA

Continuous Collector Current (I_C)

100 mA

Current Gain-Bandwidth Product (f_T)

15 MHz

DC Current Gain (h_FE)

25 — 250

Emitter-Base Breakdown Voltage (BV_EBO)

6 V

Emitter-Base Voltage (V_EBO)

6 V

Junction Temperature (T_j)

-65 — 175 °C

Output Capacitance (C_ob)

12 pF

Power Dissipation (P_D)

800 mW

Power Dissipation (P_D)

2.5 W

Storage Temperature (T_stg)

-65 — 175 °C

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
MJ420	Box@500		Active	250V,100mA,800mW Through-Hole Transistor-Small Signal (<=1A) NPN High Voltage	EAR99	8541.21.0095	PBFREE


Item	Type
No matching documents found.
Analytical Test Report:Bond Wire	Analytical Test Report
Analytical Test Report:Cap	Analytical Test Report
Analytical Test Report:Header	Analytical Test Report
Analytical Test Report:Header Assembly	Analytical Test Report
LSSGP067.PDF	Device Datasheet
Material Composition:TO-39	Material Composition
Package Detail Document:TO-39	Package Detail Document
Product Reliability Data:TO-39 Package Reliability	Product Reliability Data