MJE15030

150V,8A,2W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch

Case Type: TO-220

Base-Emitter On Voltage (VBE(ON))
1 V
Collector-Base Cutoff Current (ICBO)
10 µA
Collector-Base Voltage (VCBO)
150 V
Collector-Emitter Breakdown Voltage (BVCEO)
150 V
Collector-Emitter Cutoff Current (ICEO)
100 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
0.5 V
Collector-Emitter Voltage (VCEO)
150 V
Continuous Base Current (IB)
2 A
Continuous Collector Current (IC)
8 A
Current Gain-Bandwidth Product (fT)
30 MHz
DC Current Gain (hFE)
40
DC Current Gain (hFE)
40
DC Current Gain (hFE)
40
DC Current Gain (hFE)
20
Emitter-Base Cutoff Current (IEBO)
10 µA
Emitter-Base Voltage (VEBO)
5 V
Junction Temperature (Tj)
-65 — 150 °C
Peak Collector Current (ICM)
16 A
Power Dissipation (PD)
2 W
Power Dissipation (PD)
50 W
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient (ΘJA)
62.5 °C/W
Thermal Resistance Junction-Case (ΘJC)
2.5 °C/W

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
MJE15030 Sleeve@50 Discontinued 150V,8A,2W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch EAR99 8541.29.0075 PBFREE

Resources

Analytical Test Report:Die Attach Analytical Test Report
Analytical Test Report:Leadframe Analytical Test Report
Analytical Test Report:Sn Plating Analytical Test Report
Analytical Test Report:Tin Plating Analytical Test Report
Material Composition:TO-220 Material Composition
MJE15028-15031.PDF Device Datasheet
Package Detail Document:TO-220 Package Detail Document
Product EOL Notice:Power transistors bare die and Product EOL Notice
Product Reliability Data:TO-220 Package Reliability Product Reliability Data
Spice Model:Spice Model MJE15030 Spice Model

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AEM stands ready to assist with your latest design endeavors as your trusted partner.

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  • PbSn plating options
  • Package details
  • Application notes
  • Application and design sample kits
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