MJE2801T
60V,10A,75W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch
Case Type: TO-220
Technical Specifications
Similar Products with Selected SpecificationsTest Conditions
IC = 3 A
VCE = 2 V
Test Conditions
VCB = 60 V
Test Conditions
VCB = 60 V
TC = 150 °C
Test Conditions
IC = 200 mA
Test Conditions
VCE = 2 V
IC = 3 A
Test Conditions
VEB = 4 V
Ordering
| Part | Package | Buy | Status | Description | ECCN Code | HTS Code | Termination |
|---|---|---|---|---|---|---|---|
| MJE2801T | Sleeve@50 | Active | 60V,10A,75W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch | EAR99 | 8541.29.0095 | TIN |
Resources
| Item | Type |
|---|---|
| No matching documents found. | |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Leadframe | Analytical Test Report |
| Analytical Test Report:Sn Plating | Analytical Test Report |
| Analytical Test Report:Tin Plating | Analytical Test Report |
| LSSGP093.PDF | Device Datasheet |
| Material Composition:TO-220 | Material Composition |
| Package Detail Document:TO-220 | Package Detail Document |
| Product EOL Notice:Power transistors bare die and | Product EOL Notice |
| Product Reliability Data:TO-220 Package Reliability | Product Reliability Data |
Product Support
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Design Support
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- Free quick ship samples (2nd day air)
- Online technical data and parametric search
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- Environmental regulation compliance
- Customer specific screening
- Up-screening capabilities
- Special wafer diffusions
- PbSn plating options
- Package details
- Application notes
- Application and design sample kits
- Custom product and package development