MJE2901T

60V,10A,75W Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/Switch

Case Type: TO-220

Base-Emitter On Voltage (V_BE(ON))

1.4 V

Collector-Base Cutoff Current (I_CBO)

0.1 mA

Collector-Base Cutoff Current (I_CBO)

2 mA

Collector-Base Voltage (V_CBO)

60 V

Collector-Emitter Breakdown Voltage (BV_CEO)

60 V

Collector-Emitter Voltage (V_CEO)

60 V

Continuous Collector Current (I_C)

10 A

DC Current Gain (h_FE)

25 — 100

Emitter-Base Cutoff Current (I_EBO)

1 mA

Emitter-Base Voltage (V_EBO)

4 V

Junction Temperature (T_j)

-65 — 150 °C

Peak Collector Current (I_CM)

15 A

Power Dissipation (P_D)

75 W

Storage Temperature (T_stg)

-65 — 150 °C

Thermal Resistance Junction-Ambient (Θ_JA)

1.67 °C/W

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
MJE2901T	Sleeve@50		Discontinued	60V,10A,75W Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/Switch	EAR99	8541.29.0095	PBFREE


Item	Type
No matching documents found.
Analytical Test Report:Die Attach	Analytical Test Report
Analytical Test Report:Leadframe	Analytical Test Report
Analytical Test Report:Sn Plating	Analytical Test Report
LSSGP093.PDF	Device Datasheet
Material Composition:TO-220	Material Composition
Package Detail Document:TO-220	Package Detail Document
Product EOL Notice:Power transistors bare die and	Product EOL Notice
Product Reliability Data:TO-220 Package Reliability	Product Reliability Data