MJE3440

250V,300mA,15W Through-Hole Transistor-Small Signal (<=1A) NPN High Voltage

Case Type: TO-126

Base-Emitter On Voltage (VBE(ON))
800 mV
Base-Emitter Saturation Voltage (VBE(SAT))
1.3 V
Collector-Base Cutoff Current (ICBO)
20 µA
Collector-Base Voltage (VCBO)
350 V
Collector-Emitter Breakdown Voltage (BVCEO)
250 V
Collector-Emitter Cutoff Current (ICEV)
500 µA
Collector-Emitter Cutoff Current (ICEO)
50 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
500 mV
Collector-Emitter Voltage (VCEO)
250 V
Continuous Base Current (IB)
150 mA
Continuous Collector Current (IC)
300 mA
Current Gain-Bandwidth Product (fT)
15 MHz
DC Current Gain (hFE)
30
DC Current Gain (hFE)
50 — 200
Emitter-Base Cutoff Current (IEBO)
20 µA
Emitter-Base Voltage (VEBO)
5 V
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
10 pF
Power Dissipation (PD)
15 W
Small Signal Current Gain (hfe)
25
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Case (ΘJC)
8.33 °C/W

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
MJE3440 Sleeve@50 Discontinued 250V,300mA,15W Through-Hole Transistor-Small Signal (<=1A) NPN High Voltage EAR99 8541.29.0095 PBFREE

Resources

Analytical Test Report:Copper Bonding Wire Analytical Test Report
Analytical Test Report:Die Attach Analytical Test Report
Analytical Test Report:Epoxy Molding Compound Analytical Test Report
Analytical Test Report:Leadframe Analytical Test Report
Analytical Test Report:Sn Plating Analytical Test Report
Analytical Test Report:Tin Plating Analytical Test Report
LSSGP088.PDF Device Datasheet
Material Composition:TO-126 Material Composition
Package Detail Document:TO-126 Package Detail Document
Product EOL Notice:Power transistors bare die and Product EOL Notice
Product Reliability Data:TO-126 Package Reliability Product Reliability Data

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AEM stands ready to assist with your latest design endeavors as your trusted partner.

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