MJE521

40V,4A,40W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch

Case Type: TO-126

Collector-Base Cutoff Current (I_CBO)

100 µA

Collector-Base Voltage (V_CBO)

40 V

Collector-Emitter Breakdown Voltage (BV_CEO)

40 V

Collector-Emitter Voltage (V_CEO)

40 V

Continuous Collector Current (I_C)

4 A

DC Current Gain (h_FE)

Emitter-Base Cutoff Current (I_EBO)

100 µA

Emitter-Base Voltage (V_EBO)

4 V

Junction Temperature (T_j)

-65 — 150 °C

Peak Collector Current (I_CM)

8 A

Power Dissipation (P_D)

40 W

Storage Temperature (T_stg)

-65 — 150 °C

Thermal Resistance Junction-Case (Θ_JC)

3.1 °C/W

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
MJE521	Sleeve@50		Discontinued	40V,4A,40W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch	EAR99	8541.29.0095	PBFREE


Item	Type
No matching documents found.
Analytical Test Report:Copper Bonding Wire	Analytical Test Report
Analytical Test Report:Die Attach	Analytical Test Report
Analytical Test Report:Epoxy Molding Compound	Analytical Test Report
Analytical Test Report:Leadframe	Analytical Test Report
Analytical Test Report:Sn Plating	Analytical Test Report
Analytical Test Report:Tin Plating	Analytical Test Report
Material Composition:TO-126	Material Composition
MJE371.PDF	Device Datasheet
Package Detail Document:TO-126	Package Detail Document
Product EOL Notice:Power transistors bare die and	Product EOL Notice
Product Reliability Data:TO-126 Package Reliability	Product Reliability Data

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AEM stands ready to assist with your latest design endeavors as your trusted partner.