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MJE720

40V,1.5A,1.25W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch

Case Type: TO-126

Device Datasheet

Technical Specifications

Base-Emitter On Voltage (V_BE(ON))

950 mV

Base-Emitter Saturation Voltage (V_BE(SAT))

1.3 V

Collector-Base Voltage (V_CBO)

40 V

Collector-Emitter Breakdown Voltage (BV_CEO)

40 V

Collector-Emitter Cutoff Current (I_CEV)

100 µA

Collector-Emitter Cutoff Current (I_CEV)

500 µA

Collector-Emitter Cutoff Current (I_CEO)

500 µA

Collector-Emitter Saturation Voltage (V_CE(SAT))

150 mV

Collector-Emitter Saturation Voltage (V_CE(SAT))

400 mV

Collector-Emitter Saturation Voltage (V_CE(SAT))

1 V

Collector-Emitter Voltage (V_CEO)

40 V

Continuous Base Current (I_B)

0.5 A

Continuous Collector Current (I_C)

1.5 A

DC Current Gain (h_FE)

Emitter-Base Cutoff Current (I_EBO)

1 mA

Emitter-Base Voltage (V_EBO)

5 V

Junction Temperature (T_j)

-65 — 150 °C

Power Dissipation (P_D)

1.25 W

Power Dissipation (P_D)

20 W

Storage Temperature (T_stg)

-65 — 150 °C

Thermal Resistance Junction-Ambient (Θ_JA)

100 °C/W

Thermal Resistance Junction-Case (Θ_JC)

6.25 °C/W

Ordering

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
MJE720	Sleeve@50		Discontinued	40V,1.5A,1.25W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch	EAR99	8541.29.0095	PBFREE

Resources


Item	Type
No matching documents found.
Analytical Test Report:Copper Bonding Wire	Analytical Test Report
Analytical Test Report:Die Attach	Analytical Test Report
Analytical Test Report:Epoxy Molding Compound	Analytical Test Report
Analytical Test Report:Leadframe	Analytical Test Report
Analytical Test Report:Sn Plating	Analytical Test Report
Material Composition:TO-126	Material Composition
MJE710.PDF	Device Datasheet
Package Detail Document:TO-126	Package Detail Document
Product EOL Notice:Power transistors bare die and	Product EOL Notice
Product Reliability Data:TO-126 Package Reliability	Product Reliability Data