MM4003

250V,500mA,600mW Through-Hole Transistor-Small Signal (<=1A) PNP High Voltage

Case Type: TO-39

Collector-Base Breakdown Voltage (BV_CBO)

250 V

Collector-Base Cutoff Current (I_CBO)

5 µA

Collector-Base Voltage (V_CBO)

250 V

Collector-Emitter Breakdown Voltage (BV_CEO)

250 V

Collector-Emitter Saturation Voltage (V_CE(SAT))

5 V

Collector-Emitter Voltage (V_CEO)

250 V

Continuous Collector Current (I_C)

500 mA

DC Current Gain (h_FE)

Emitter-Base Breakdown Voltage (BV_EBO)

4 V

Emitter-Base Voltage (V_EBO)

4 V

Junction Temperature (T_j)

-65 — 200 °C

Output Capacitance (C_ob)

20 pF

Power Dissipation (P_D)

600 mW

Power Dissipation (P_D)

3 W

Storage Temperature (T_stg)

-65 — 200 °C

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
MM4003	Box@500		Active	250V,500mA,600mW Through-Hole Transistor-Small Signal (<=1A) PNP High Voltage	EAR99	8541.21.0095	PBFREE


Item	Type
No matching documents found.
Analytical Test Report:Bond Wire	Analytical Test Report
Analytical Test Report:Cap	Analytical Test Report
Analytical Test Report:Header	Analytical Test Report
Analytical Test Report:Header Assembly	Analytical Test Report
Material Composition:TO-39	Material Composition
MM4000-4003.PDF	Device Datasheet
Package Detail Document:TO-39	Package Detail Document
Product Reliability Data:TO-39 Package Reliability	Product Reliability Data