MPQ2369

15V,500mA,500mW Through-Hole Transistor-Quad NPN General Purpose Amplifier/Switch

Case Type: TO-116

Base-Emitter Saturation Voltage (VBE(SAT))
900 mV
Collector-Base Breakdown Voltage (BVCBO)
40 V
Collector-Base Cutoff Current (ICBO)
400 nA
Collector-Base Voltage (VCBO)
40 V
Collector-Emitter Breakdown Voltage (BVCEO)
15 V
Collector-Emitter Saturation Voltage (VCE(SAT))
250 mV
Collector-Emitter Voltage (VCEO)
15 V
Continuous Collector Current (IC)
500 mA
Current Gain-Bandwidth Product (fT)
450 MHz
DC Current Gain (hFE)
40
DC Current Gain (hFE)
20
Emitter-Base Breakdown Voltage (BVEBO)
4.5 V
Emitter-Base Cutoff Current (IEBO)
500 nA
Emitter-Base Voltage (VEBO)
4.5 V
Input Capacitance (Cib)
5 pF
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
4 pF
Power Dissipation (PD)
500 mW
Power Dissipation (PD)
1.5 W
Storage Temperature (Tstg)
-65 — 150 °C
Turn Off Time (toff)
12 ns
Turn On Time (ton)
9 ns

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
MPQ2369 Sleeve@25 Discontinued 15V,500mA,500mW Through-Hole Transistor-Quad NPN General Purpose Amplifier/Switch EAR99 8541.21.0075 TIN

Resources

Analytical Test Report:Bond Wire Analytical Test Report
Analytical Test Report:Die Attach Analytical Test Report
Analytical Test Report:Halogen Free Analytical Test Report
Analytical Test Report:Lead frame Analytical Test Report
Analytical Test Report:Pure Tin Solder, Sn Analytical Test Report
Material Composition:TO-116 Material Composition
MPQ2369.PDF Device Datasheet
Package Detail Document:TO-116 Package Detail Document
Process Change Notice:CP207 replaced by CP396V Process Change Notice
Product EOL Notice:TO-116 CASE Product EOL Notice

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