MPQ2484

40V,50mA,500mW Through-Hole Transistor-Quad NPN General Purpose Amplifier/Switch

Case Type: TO-116

Base-Emitter On Voltage (VBE(ON))
700 mV
Base-Emitter On Voltage (VBE(ON))
800 mV
Collector-Base Breakdown Voltage (BVCBO)
60 V
Collector-Base Cutoff Current (ICBO)
20 nA
Collector-Base Voltage (VCBO)
60 V
Collector-Emitter Breakdown Voltage (BVCEO)
40 V
Collector-Emitter Saturation Voltage (VCE(SAT))
350 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
500 mV
Collector-Emitter Voltage (VCEO)
40 V
Continuous Collector Current (IC)
50 mA
Current Gain-Bandwidth Product (fT)
50 MHz
DC Current Gain (hFE)
200
DC Current Gain (hFE)
300
DC Current Gain (hFE)
300
Emitter-Base Breakdown Voltage (BVEBO)
6 V
Emitter-Base Cutoff Current (IEBO)
20 nA
Emitter-Base Voltage (VEBO)
6 V
Input Capacitance (Cib)
8 pF
Junction Temperature (Tj)
-55 — 150 °C
Noise Figure (NF)
2 dB
Output Capacitance (Cob)
6 pF
Power Dissipation (PD)
500 mW
Power Dissipation (PD)
900 mW
Power Dissipation (PD)
825 mW
Power Dissipation (PD)
2.4 W
Storage Temperature (Tstg)
-55 — 150 °C

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
MPQ2484 Sleeve@25 Discontinued 40V,50mA,500mW Through-Hole Transistor-Quad NPN General Purpose Amplifier/Switch EAR99 8541.21.0095 PBFREE

Resources

Analytical Test Report:Bond Wire Analytical Test Report
Analytical Test Report:Halogen Free Analytical Test Report
Analytical Test Report:Pure Tin Solder, Sn Analytical Test Report
LSSGP079.PDF Device Datasheet
Material Composition:TO-116 Material Composition
Package Detail Document:TO-116 Package Detail Document
Product EOL Notice:TO-116 CASE Product EOL Notice