MPQ3725A

50V,1A,1W Through-Hole Transistor-Quad NPN General Purpose Amplifier/Switch

Case Type: TO-116

Base-Emitter Saturation Voltage (VBE(SAT))
0.8 — 1 V
Collector-Base Cutoff Current (ICBO)
500 nA
Collector-Emitter Breakdown Voltage (BVCES)
70 V
Collector-Emitter Breakdown Voltage (BVCEO)
50 V
Collector-Emitter Saturation Voltage (VCE(SAT))
450 mV
Collector-Emitter Voltage (VCES)
70 V
Collector-Emitter Voltage (VCEO)
50 V
Continuous Collector Current (IC)
1 A
Current Gain-Bandwidth Product (fT)
200 MHz
DC Current Gain (hFE)
40
DC Current Gain (hFE)
30
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Voltage (VEBO)
5 V
Input Capacitance (Cib)
80 pF
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
10 pF
Power Dissipation (PD)
1 W
Power Dissipation (PD)
2.5 W
Storage Temperature (Tstg)
-65 — 150 °C

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
MPQ3725A Sleeve@25 Discontinued 50V,1A,1W Through-Hole Transistor-Quad NPN General Purpose Amplifier/Switch EAR99 8541.29.0075 PBFREE

Resources

Analytical Test Report:Bond Wire Analytical Test Report
Analytical Test Report:Die Attach Analytical Test Report
Analytical Test Report:Halogen Free Analytical Test Report
Analytical Test Report:Lead frame Analytical Test Report
Analytical Test Report:Pure Tin Solder, Sn Analytical Test Report
Material Composition:TO-116 Material Composition
MPQ3725A.PDF Device Datasheet
Package Detail Document:TO-116 Package Detail Document
Product EOL Notice:CP337V WAFER PROCESS Product EOL Notice

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