MPQ3762

40V,1.5A,750mW Through-Hole Transistor-Quad PNP General Purpose Amplifier/Switch

Case Type: TO-116

Base-Emitter Saturation Voltage (VBE(SAT))
1.25 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.4 V
Collector-Base Breakdown Voltage (BVCBO)
40 V
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Base Voltage (VCBO)
40 V
Collector-Emitter Breakdown Voltage (BVCEO)
40 V
Collector-Emitter Saturation Voltage (VCE(SAT))
550 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
900 mV
Collector-Emitter Voltage (VCEO)
40 V
Continuous Collector Current (IC)
1.5 A
Current Gain-Bandwidth Product (fT)
150 MHz
DC Current Gain (hFE)
35
DC Current Gain (hFE)
30
DC Current Gain (hFE)
20
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Voltage (VEBO)
5 V
Input Capacitance (Cib)
80 pF
Junction Temperature (Tj)
-55 — 150 °C
Output Capacitance (Cob)
15 pF
Power Dissipation (PD)
750 mW
Power Dissipation (PD)
1.7 W
Power Dissipation (PD)
1.25 W
Power Dissipation (PD)
3.2 W
Storage Temperature (Tstg)
-55 — 150 °C
Turn Off Time (toff)
120 ns
Turn On Time (ton)
50 ns

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
MPQ3762 Sleeve@25 Discontinued 40V,1.5A,750mW Through-Hole Transistor-Quad PNP General Purpose Amplifier/Switch EAR99 8541.21.0075 PBFREE

Resources

Analytical Test Report:Bond Wire Analytical Test Report
Analytical Test Report:Die Attach Analytical Test Report
Analytical Test Report:Halogen Free Analytical Test Report
Analytical Test Report:Lead frame Analytical Test Report
Analytical Test Report:Pure Tin Solder, Sn Analytical Test Report
LSSGP079.PDF Device Datasheet
Material Composition:TO-116 Material Composition
Package Detail Document:TO-116 Package Detail Document
Product EOL Notice:TO-116 CASE Product EOL Notice

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