MPQ6100A

45V,50mA,500mW Through-Hole Transistor-Quad 2 X NPN & 2 X PNP General Purpose Amplifier

Case Type: TO-116

Base-Emitter Saturation Voltage (VBE(SAT))
800 mV
Collector-Base Breakdown Voltage (BVCBO)
60 V
Collector-Base Cutoff Current (ICBO)
10 nA
Collector-Base Voltage (VCBO)
60 V
Collector-Emitter Breakdown Voltage (BVCEO)
45 V
Collector-Emitter Saturation Voltage (VCE(SAT))
250 mV
Collector-Emitter Voltage (VCEO)
45 V
Continuous Collector Current (IC)
50 mA
Current Gain-Bandwidth Product (fT)
50 MHz
DC Current Gain (hFE)
100
DC Current Gain (hFE)
150
DC Current Gain (hFE)
150
DC Current Gain (hFE)
125
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Voltage (VEBO)
5 V
Input Capacitance (Cib)
8 pF
Junction Temperature (Tj)
-55 — 150 °C
Output Capacitance (Cob)
4 pF
Power Dissipation (PD)
500 mW
Power Dissipation (PD)
900 mW
Power Dissipation (PD)
825 mW
Power Dissipation (PD)
2.4 W
Storage Temperature (Tstg)
-55 — 150 °C

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
MPQ6100A Sleeve@25 Discontinued 45V,50mA,500mW Through-Hole Transistor-Quad 2 X NPN & 2 X PNP General Purpose Amplifier EAR99 8541.21.0095 PBFREE

Resources

Analytical Test Report:Bond Wire Analytical Test Report
Analytical Test Report:Die Attach Analytical Test Report
Analytical Test Report:Halogen Free Analytical Test Report
Analytical Test Report:Lead frame Analytical Test Report
Analytical Test Report:Pure Tin Solder, Sn Analytical Test Report
LSSGP079.PDF Device Datasheet
Material Composition:TO-116 Material Composition
Package Detail Document:TO-116 Package Detail Document
Product EOL Notice:TO-116 CASE Product EOL Notice

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AEM stands ready to assist with your latest design endeavors as your trusted partner.

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