PN3642

45V,500mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/Switch

Case Type: TO-92

Amplifier Power Gain (Gpe)
10 dB
Collector Efficiency (η)
60 %
Collector-Base Breakdown Voltage (BVCBO)
60 V
Collector-Base Voltage (VCBO)
60 V
Collector-Emitter Breakdown Voltage (BVCEO)
45 V
Collector-Emitter Breakdown Voltage (BVCES)
60 V
Collector-Emitter Cutoff Current (ICES)
50 nA
Collector-Emitter Saturation Voltage (VCE(SAT))
220 mV
Collector-Emitter Voltage (VCEO)
45 V
Continuous Collector Current (IC)
500 mA
Current Gain-Bandwidth Product (fT)
150 MHz
DC Current Gain (hFE)
40 — 120
DC Current Gain (hFE)
15
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Voltage (VEBO)
5 V
Junction Temperature (Tj)
-55 — 150 °C
Output Capacitance (Cob)
8 pF
Power Dissipation (PD)
625 mW
Storage Temperature (Tstg)
-55 — 150 °C
Turn Off Time (toff)
150 ns
Turn On Time (ton)
60 ns

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
PN3642 Box@2,500 Active 45V,500mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/Switch EAR99 8541.21.0075 LEAD or TIN

Resources

2N3641-3643.PDF Device Datasheet
Analytical Test Report:Copper Bonding Wire Analytical Test Report
Analytical Test Report:Copper Wire Analytical Test Report
Analytical Test Report:Green Epoxy Molding Compound Analytical Test Report
Analytical Test Report:Lead Frame Analytical Test Report
Analytical Test Report:Pure Tin Solder, Sn Analytical Test Report
Analytical Test Report:Tin Plating Analytical Test Report
Material Composition:TO-92 Material Composition
Package Detail Document:TO-92 Package Detail Document
Process Change Notice:TO-92 process change eutectic Process Change Notice
Product Reliability Data:TO-92 Package Reliability Product Reliability Data