TIP35C

100V,25A,125W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch

Case Type: TO-218

Base-Emitter On Voltage (VBE(ON))
2 V
Base-Emitter On Voltage (VBE(ON))
4.5 V
Collector-Base Voltage (VCBO)
100 V
Collector-Emitter Breakdown Voltage (BVCEO)
100 V
Collector-Emitter Cutoff Current (ICES)
700 µA
Collector-Emitter Cutoff Current (ICEO)
1 mA
Collector-Emitter Saturation Voltage (VCE(SAT))
1.8 V
Collector-Emitter Saturation Voltage (VCE(SAT))
4 V
Collector-Emitter Voltage (VCEO)
100 V
Continuous Base Current (IB)
5 A
Continuous Collector Current (IC)
25 A
Current Gain-Bandwidth Product (fT)
3 MHz
DC Current Gain (hFE)
25
DC Current Gain (hFE)
10 — 100
Emitter-Base Cutoff Current (IEBO)
1 mA
Emitter-Base Voltage (VEBO)
5 V
Junction Temperature (Tj)
-65 — 150 °C
Peak Collector Current (ICM)
40 A
Power Dissipation (PD)
125 W
Small Signal Current Gain (hfe)
25
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Case (ΘJC)
1 °C/W

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
TIP35C Box@100 Discontinued 100V,25A,125W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch EAR99 8541.29.0095 PBFREE

Resources

Product EOL Notice:TO-218 CASE Product EOL Notice
TIP35.PDF Device Datasheet

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