TIP41

40V,6A,2W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch

Case Type: TO-220

Base-Emitter On Voltage (VBE(ON))
2 V
Collector-Base Voltage (VCBO)
40 V
Collector-Emitter Breakdown Voltage (BVCEO)
40 V
Collector-Emitter Cutoff Current (ICEO)
700 µA
Collector-Emitter Cutoff Current (ICES)
400 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
1.5 V
Collector-Emitter Voltage (VCEO)
40 V
Continuous Base Current (IB)
2 A
Continuous Collector Current (IC)
6 A
Current Gain-Bandwidth Product (fT)
3 MHz
DC Current Gain (hFE)
30
DC Current Gain (hFE)
15 — 75
Emitter-Base Cutoff Current (IEBO)
1 mA
Emitter-Base Voltage (VEBO)
5 V
Junction Temperature (Tj)
-65 — 150 °C
Peak Collector Current (ICM)
10 A
Power Dissipation (PD)
2 W
Power Dissipation (PD)
65 W
Small Signal Current Gain (hfe)
20
Storage Temperature (Tstg)
-65 — 150 °C
Turn Off Time (toff)
1 µs
Turn On Time (ton)
0.6 µs

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
TIP41 Sleeve@50 Discontinued 40V,6A,2W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch EAR99 8541.29.0095 TIN

Resources

Analytical Test Report:Die Attach Analytical Test Report
Analytical Test Report:Leadframe Analytical Test Report
Analytical Test Report:Sn Plating Analytical Test Report
Analytical Test Report:Tin Plating Analytical Test Report
Material Composition:TO-220 Material Composition
Package Detail Document:TO-220 Package Detail Document
Product EOL Notice:Power transistors bare die and Product EOL Notice
Product Reliability Data:TO-220 Package Reliability Product Reliability Data
TIP41.PDF Device Datasheet

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