CTLM3474-M832D

Surface mount Transistor-Small Signal (<=1A) 25V,1A Dual NPN&25V,1A PNP Low VCE(SAT)

Case Type: TLM832D

Base-Emitter On Voltage (VBE(ON))
900 mV
Base-Emitter On Voltage (VBE(ON))
900 mV
Base-Emitter Saturation Voltage (VBE(SAT))
1.1 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.1 V
Collector-Base Breakdown Voltage (BVCBO)
40 V
Collector-Base Breakdown Voltage (BVCBO)
40 V
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Base Voltage (VCBO)
40 V
Collector-Base Voltage (VCBO)
40 V
Collector-Emitter Breakdown Voltage (BVCEO)
25 V
Collector-Emitter Breakdown Voltage (BVCEO)
25 V
Collector-Emitter Saturation Voltage (VCE(SAT))
50 mV

(25 mV Typical)

Collector-Emitter Saturation Voltage (VCE(SAT))
75 mV

(40 mV Typical)

Collector-Emitter Saturation Voltage (VCE(SAT))
150 mV

(80 mV Typical)

Collector-Emitter Saturation Voltage (VCE(SAT))
250 mV

(190 mV Typical)

Collector-Emitter Saturation Voltage (VCE(SAT))
400 mV

(290 mV Typical)

Collector-Emitter Saturation Voltage (VCE(SAT))
450 mV

(360 mV Typical)

Collector-Emitter Saturation Voltage (VCE(SAT))
50 mV

(30 mV Typical)

Collector-Emitter Saturation Voltage (VCE(SAT))
75 mV

(50 mV Typical)

Collector-Emitter Saturation Voltage (VCE(SAT))
150 mV

(95 mV Typical)

Collector-Emitter Saturation Voltage (VCE(SAT))
250 mV

(205 mV Typical)

Collector-Emitter Saturation Voltage (VCE(SAT))
400 mV

(320 mV Typical)

Collector-Emitter Saturation Voltage (VCE(SAT))
450 mV

(400 mV Typical)

Collector-Emitter Voltage (VCEO)
25 V
Collector-Emitter Voltage (VCEO)
25 V
Continuous Collector Current (IC)
1 A
Continuous Collector Current (IC)
1 A
Current Gain-Bandwidth Product (fT)
100 MHz
Current Gain-Bandwidth Product (fT)
100 MHz
DC Current Gain (hFE)
100
DC Current Gain (hFE)
100 — 300
DC Current Gain (hFE)
100
DC Current Gain (hFE)
50
DC Current Gain (hFE)
100
DC Current Gain (hFE)
100 — 300
DC Current Gain (hFE)
100
DC Current Gain (hFE)
50
Emitter-Base Breakdown Voltage (BVEBO)
6 V
Emitter-Base Breakdown Voltage (BVEBO)
6 V
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Voltage (VEBO)
6 V
Emitter-Base Voltage (VEBO)
6 V
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
10 pF

(6 pF Typical)

Output Capacitance (Cob)
15 pF

(10 pF Typical)

Power Dissipation (PD)
1.65 W
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient (ΘJA)
76 °C/W

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CTLM3474-M832D TR Tape & Reel@3,000 Discontinued Surface mount Transistor-Small Signal (<=1A) 25V,1A Dual NPN&25V,1A PNP Low VCE(SAT) EAR99 8541.29.0075 PBFREE

Resources

Analytical Test Report:Die Attach Analytical Test Report
Analytical Test Report:Die Attach Analytical Test Report
Analytical Test Report:Gold Bond Wire Analytical Test Report
Analytical Test Report:Green Epoxy Molding Compound Analytical Test Report
CTLM3410-M832D.PDF Device Datasheet
Package Detail Document:TLM832D Package Detail Document
Process Change Notice:TLM832D Leadframe change from Process Change Notice
Product EOL Notice:BLANKET PDN-ALL OTHER PRODUCTS Product EOL Notice

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