CP635-2N3791

60V,10A,150W Up-Screened Bare Die MIL-PRF-38534 Class H Equivalent,106.000 X 106.000 mils,Transistor-Bipolar Power (>1A)

Case Type: CHIP,WAFFLE

Base-Emitter On Voltage (VBE(ON))
1.8 V
Base-Emitter On Voltage (VBE(ON))
4 V
Collector-Base Voltage (VCBO)
60 V
Collector-Emitter Breakdown Voltage (BVCEO)
60 V
Collector-Emitter Cutoff Current (ICEV)
1 mA
Collector-Emitter Cutoff Current (ICEV)
5 mA
Collector-Emitter Saturation Voltage (VCE(SAT))
1 V
Collector-Emitter Voltage (VCEO)
60 V
Continuous Base Current (IB)
4 A
Continuous Collector Current (IC)
10 A
Current Gain-Bandwidth Product (fT)
4 MHz
DC Current Gain (hFE)
50 — 180
DC Current Gain (hFE)
30
Emitter-Base Cutoff Current (IEBO)
5 mA
Emitter-Base Voltage (VEBO)
7 V
Junction Temperature (Tj)
-65 — 200 °C
Power Dissipation (PD)
150 W
Storage Temperature (Tstg)
-65 — 200 °C
Thermal Resistance Junction-Case (ΘJC)
1.17 °C/W

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CP635-H2N3791-CM WafflePack@100 Discontinued 60V,10A,150W Up-Screened Bare Die MIL-PRF-38534 Class H Equivalent,106.000 X 106.000 mils,Transistor-Bipolar Power (>1A) EAR99 8541.29.0040 PBFREE

Resources

Analytical Test Report:Active Device, Rectifier Analytical Test Report
Analytical Test Report:Die Analytical Test Report
Analytical Test Report:Die Analytical Test Report
Analytical Test Report:Wafer Schottky Analytical Test Report
Analytical Test Report:Wafer Switching Diode Analytical Test Report
Analytical Test Report:Wafer Transistor Analytical Test Report
CP635-2N3791_WPD.PDF Device Datasheet
Package Detail Document:WAFER Package Detail Document
Product EOL Notice:CP635 Product EOL Notice

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AEM stands ready to assist with your latest design endeavors as your trusted partner.

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