CP635-H2N3791-CM

60V,10A,150W Up-Screened Bare Die MIL-PRF-38534 Class H Equivalent,106.000 X 106.000 mils,Transistor-Bipolar Power (>1A)

Case Type: CHIP,WAFFLE

Base-Emitter On Voltage (V_BE(ON))

1.8 V

Base-Emitter On Voltage (V_BE(ON))

4 V

Collector-Base Voltage (V_CBO)

60 V

Collector-Emitter Breakdown Voltage (BV_CEO)

60 V

Collector-Emitter Cutoff Current (I_CEV)

1 mA

Collector-Emitter Cutoff Current (I_CEV)

5 mA

Collector-Emitter Saturation Voltage (V_CE(SAT))

1 V

Collector-Emitter Voltage (V_CEO)

60 V

Continuous Base Current (I_B)

4 A

Continuous Collector Current (I_C)

10 A

Current Gain-Bandwidth Product (f_T)

4 MHz

DC Current Gain (h_FE)

50 — 180

DC Current Gain (h_FE)

Emitter-Base Cutoff Current (I_EBO)

5 mA

Emitter-Base Voltage (V_EBO)

7 V

Junction Temperature (T_j)

-65 — 200 °C

Power Dissipation (P_D)

150 W

Storage Temperature (T_stg)

-65 — 200 °C

Thermal Resistance Junction-Case (Θ_JC)

1.17 °C/W

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
CP635-H2N3791-CM	WafflePack@100		Discontinued	60V,10A,150W Up-Screened Bare Die MIL-PRF-38534 Class H Equivalent,106.000 X 106.000 mils,Transistor-Bipolar Power (>1A)	EAR99	8541.29.0040	PBFREE


Item	Type
No matching documents found.
Analytical Test Report:Active Device, Rectifier	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:Wafer Schottky	Analytical Test Report
Analytical Test Report:Wafer Switching Diode	Analytical Test Report
Analytical Test Report:Wafer Transistor	Analytical Test Report
CP635-2N3791_WPD.PDF	Device Datasheet
Package Detail Document:WAFER	Package Detail Document
Product EOL Notice:CP635	Product EOL Notice