Technical Specifications
Similar Products with Selected Specifications
Junction Temperature (Tj)
-65 — 200 °C
Power Dissipation (PD)
400 mW
Reverse Voltage Leakage Current (IR)
Test Conditions
VR = 1 V
4 µA
Storage Temperature (Tstg)
-65 — 200 °C
Zener Impedance (ZZT)
Test Conditions
IZT = 20 mA
24 Ω
Zener Voltage (VZ)
Test Conditions
IZT = 20 mA
3.135 — 3.465 V
(3.3 V Typical)
Ordering
| Part | Package | Buy | Status | Description | ECCN Code | HTS Code | Termination |
|---|---|---|---|---|---|---|---|
| 1N3506 BK | Box@2,500 | Active | 3.3V,400mW Through-Hole Diode-Zener Single: Standard | EAR99 | 8541.10.0050 | PBFREE |
Resources
| Item | Type |
|---|---|
| No matching documents found. | |
| 1N3506-3534.PDF | Device Datasheet |
| Analytical Test Report:Glass Encapsulation | Analytical Test Report |
| Analytical Test Report:Leadframe | Analytical Test Report |
| Analytical Test Report:Leadframe | Analytical Test Report |
| Analytical Test Report:Sn Plating | Analytical Test Report |
| Material Composition:DO-35 | Material Composition |
| Package Detail Document:DO-35 | Package Detail Document |
| Process Change Notice:DO-35 Alternate Marking | Process Change Notice |
| Product Reliability Data:DO-35 Package Reliability | Product Reliability Data |