Technical Specifications
Similar Products with Selected Specifications
Junction Temperature (Tj)
-65 — 200 °C
Power Dissipation (PD)
400 mW
Reverse Voltage Leakage Current (IR)
Test Conditions
VR = 18 V
0.01 µA
Storage Temperature (Tstg)
-65 — 200 °C
Zener Impedance (ZZT)
Test Conditions
IZT = 5 mA
20 Ω
Zener Voltage (VZ)
Test Conditions
IZT = 5 mA
19 — 21 V
(20 V Typical)
Resources
| Item | Type |
|---|---|
| No matching documents found. | |
| 1N3506-3534.PDF | Device Datasheet |
| Analytical Test Report:Glass Encapsulation | Analytical Test Report |
| Analytical Test Report:Leadframe | Analytical Test Report |
| Analytical Test Report:Leadframe | Analytical Test Report |
| Analytical Test Report:Sn Plating | Analytical Test Report |
| Material Composition:DO-35 | Material Composition |
| Package Detail Document:DO-35 | Package Detail Document |
| Process Change Notice:DO-35 Alternate Marking | Process Change Notice |
| Product Reliability Data:DO-35 Package Reliability | Product Reliability Data |