1N4687

4.3V,500mW Through-Hole Diode-Zener Single: Low Level

Case Type: DO-35

Forward Voltage (V_F)

1.5 V

Junction Temperature (T_j)

-65 — 200 °C

Maximum Change in Zener Voltage Over Current (ΔV_Z)

990 mV

Maximum Zener Current (I_ZM)

65 mA

Power Dissipation (P_D)

500 mW

Reverse Voltage Leakage Current (I_R)

4 µA

Storage Temperature (T_stg)

-65 — 200 °C

Zener Voltage (V_Z)

4.085 — 4.515 V

(4.3 V Typical)

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
1N4687 BK	Box@2,500		Active	4.3V,500mW Through-Hole Diode-Zener Single: Low Level	EAR99	8541.10.0050	LEAD or TIN
1N4687 TR	Tape & Reel@10,000		Active	4.3V,500mW Through-Hole Diode-Zener Single: Low Level	EAR99	8541.10.0050	LEAD or TIN


Item	Type
No matching documents found.
1N4678-4717.PDF	Device Datasheet
Analytical Test Report:Glass Encapsulation	Analytical Test Report
Analytical Test Report:Leadframe	Analytical Test Report
Analytical Test Report:Leadframe	Analytical Test Report
Analytical Test Report:Sn Plating	Analytical Test Report
Material Composition:DO-35	Material Composition
Package Detail Document:DO-35	Package Detail Document
Process Change Notice:DO-35 Alternate Marking	Process Change Notice
Product Reliability Data:DO-35 Package Reliability	Product Reliability Data