1N5521D

4.3V,400mW Through-Hole Diode-Zener Single: Low Level Tight Tolerance

Case Type: DO-35

Forward Voltage (V_F)

1.1 V

Junction Temperature (T_j)

-65 — 200 °C

Maximum Temperature Coefficient (ΘV_Z)

-0.055 — 0.02 %/°C

Power Dissipation (P_D)

400 mW

Reverse Voltage Leakage Current (I_R)

3 µA

Storage Temperature (T_stg)

-65 — 200 °C

Zener Impedance (Z_ZT)

18 Ω

Zener Voltage (V_Z)

4.257 — 4.343 V

(4.3 V Typical)

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
1N5521D TR	Tape & Reel@10,000		Special Order Item	4.3V,400mW Through-Hole Diode-Zener Single: Low Level Tight Tolerance	EAR99	8541.10.0050	PBFREE


Item	Type
No matching documents found.
1N5518D-5546D.PDF	Device Datasheet
Analytical Test Report:Glass Encapsulation	Analytical Test Report
Analytical Test Report:Leadframe	Analytical Test Report
Analytical Test Report:Leadframe	Analytical Test Report
Analytical Test Report:Sn Plating	Analytical Test Report
Material Composition:DO-35	Material Composition
Package Detail Document:DO-35	Package Detail Document
Process Change Notice:DO-35 Alternate Marking	Process Change Notice
Product Reliability Data:DO-35 Package Reliability	Product Reliability Data