1N5525D

6.2V,400mW Through-Hole Diode-Zener Single: Low Level Tight Tolerance

Case Type: DO-35

Forward Voltage (V_F)

1.1 V

Junction Temperature (T_j)

-65 — 200 °C

Maximum Temperature Coefficient (ΘV_Z)

0.05 %/°C

Power Dissipation (P_D)

400 mW

Reverse Voltage Leakage Current (I_R)

1 µA

Storage Temperature (T_stg)

-65 — 200 °C

Zener Impedance (Z_ZT)

30 Ω

Zener Voltage (V_Z)

6.138 — 6.262 V

(6.2 V Typical)

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
1N5525D BK	Box@2,500		Special Order Item	6.2V,400mW Through-Hole Diode-Zener Single: Low Level Tight Tolerance	EAR99	8541.10.0050	PBFREE


Item	Type
No matching documents found.
1N5518D-5546D.PDF	Device Datasheet
Analytical Test Report:Glass Encapsulation	Analytical Test Report
Analytical Test Report:Leadframe	Analytical Test Report
Analytical Test Report:Sn Plating	Analytical Test Report
Material Composition:DO-35	Material Composition
Package Detail Document:DO-35	Package Detail Document
Process Change Notice:DO-35 Alternate Marking	Process Change Notice
Product Reliability Data:DO-35 Package Reliability	Product Reliability Data

AEM stands ready to assist with your latest design endeavors as your trusted partner.

AEM stands ready to assist with your latest design endeavors as your trusted partner.