2N2608

1V,4V,50mA,300mW Through-Hole JFET P Channel

Case Type: TO-18

Common Source Input Capacitance (Ciss)
17 pF
Continuous Gate Current (IG)
50 mA
Drain-Gate Voltage (VDG)
30 V
Drain-Source Voltage (VDS)
30 V
Forward Transadmittance (gfs)
1000 µS
Gate Leakage Current (IGSS)
10 nA
Gate-Source Breakdown Voltage (BVGSS)
30 V
Gate-Source Cutoff Voltage (VGS(OFF))
1 — 4 V
Gate-Source Voltage (VGS)
30 V
Noise Figure (NF)
3 dB
Power Dissipation (PD)
300 mW
Saturation Drain Current (IDSS)
0.9 — 4.5 mA
Storage Temperature (Tstg)
-60 — 200 °C

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
2N2608 Box@2,000 Active 1V,4V,50mA,300mW Through-Hole JFET P Channel EAR99 8541.21.0095 PBFREE

Resources

Analytical Test Report:Bond Wire Analytical Test Report
Analytical Test Report:Cap Analytical Test Report
Analytical Test Report:Header Analytical Test Report
Analytical Test Report:Header Assembly Analytical Test Report
Analytical Test Report:Pure Tin Solder Analytical Test Report
LSSGP100.PDF Device Datasheet
Material Composition:TO-18 Material Composition
Package Detail Document:TO-18 Package Detail Document
Process Change Notice:P-CHANNEL JFETS Process Change Notice
Product Reliability Data:TO-18 Package Reliability Product Reliability Data

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