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2N4093

1V,5V,10mA,1.8W Through-Hole JFET N Channel

Case Type: TO-18

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Technical Specifications

Similar Products with Selected Specifications
Common Source Input Capacitance (Ciss)
16 pF
Common Source Reverse Transfer Capacitance (Crss)
5 pF
Continuous Gate Current (IG)
10 mA
Drain Current-Off (ID(OFF))
200 pA
Drain Leakage Current (IDGO)
200 pA
Drain-Gate Voltage (VDG)
40 V
Drain-Source On Resistance (rds(ON))
80 Ω
Drain-Source On Voltage (VDS(ON))
200 mV
Gate-Source Breakdown Voltage (BVGSS)
40 V
Gate-Source Cutoff Voltage (VGS(OFF))
1 — 5 V
Gate-Source Voltage (VGS)
40 V
Junction Temperature (Tj)
-65 — 175 °C
Power Dissipation (PD)
1.8 W
Saturation Drain Current (IDSS)
8 mA
Static Drain-Source On Resistance (rDS(ON))
80 Ω
Storage Temperature (Tstg)
-65 — 175 °C
Turn Off Time (toff)
80 ns
Turn On Time (ton)
60 ns

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
2N4093 Box@2,000 Active 1V,5V,10mA,1.8W Through-Hole JFET N Channel EAR99 8541.29.0095 LEAD or TIN

Resources

Item Type
2N4091-4093.PDF Device Datasheet
Analytical Test Report:Bond Wire Analytical Test Report
Analytical Test Report:Cap Analytical Test Report
Analytical Test Report:Header Analytical Test Report
Analytical Test Report:Header Assembly Analytical Test Report
Analytical Test Report:Pure Tin Solder Analytical Test Report
Material Composition:TO-18 Material Composition
Package Detail Document:TO-18 Package Detail Document
Process Change Notice:CP226 REPLACE CP216 Process Change Notice
Product Brief:PB JFETs Product Brief
Product Reliability Data:TO-18 Package Reliability Product Reliability Data
Spice Model:2N4093 Spice Model

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