2N4860

2V,6V,50mA,1.8W Through-Hole JFET N Channel

Case Type: TO-18

Common Source Input Capacitance (Ciss)
18 pF
Common Source Reverse Transfer Capacitance (Crss)
8 pF
Continuous Gate Current (IG)
50 mA
Drain Current-Off (ID(OFF))
250 pA
Drain Current-Off (ID(OFF))
500 nA
Drain-Gate Voltage (VDG)
30 V
Drain-Source On Resistance (rds(ON))
40 Ω
Drain-Source On Voltage (VDS(ON))
500 mV
Drain-Source Voltage (VDS)
30 V
Gate Leakage Current (IGSS)
250 pA
Gate Leakage Current (IGSS)
500 nA
Gate-Source Breakdown Voltage (BVGSS)
30 V
Gate-Source Cutoff Voltage (VGS(OFF))
2 — 6 V
Gate-Source Voltage (VGS)
30 V
Junction Temperature (Tj)
-65 — 200 °C
Power Dissipation (PD)
1.8 W
Rise Time (tr)
4 ns
Saturation Drain Current (IDSS)
20 — 100 mA
Storage Temperature (Tstg)
-65 — 200 °C
Turn Off Time (toff)
50 ns
Turn-on Delay Time (tON)
6 ns

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
2N4860 Box@2,000 Active 2V,6V,50mA,1.8W Through-Hole JFET N Channel EAR99 8541.29.0095 PBFREE

Resources

Analytical Test Report:Bond Wire Analytical Test Report
Analytical Test Report:Cap Analytical Test Report
Analytical Test Report:Header Analytical Test Report
Analytical Test Report:Header Assembly Analytical Test Report
Analytical Test Report:Pure Tin Solder Analytical Test Report
LSSGP099.PDF Device Datasheet
Material Composition:TO-18 Material Composition
Package Detail Document:TO-18 Package Detail Document
Process Change Notice:CP226 REPLACE CP216 Process Change Notice
Product Brief:PB JFETs Product Brief
Product Reliability Data:TO-18 Package Reliability Product Reliability Data
Spice Model:2N4860 Spice Model

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