2N5116

1V,4V,50mA,500mW Through-Hole JFET P Channel

Case Type: TO-18

Common Source Input Capacitance (Ciss)
25 pF
Common Source Reverse Transfer Capacitance (Crss)
7 pF
Continuous Gate Current (IG)
50 mA
Drain Current-Off (ID(OFF))
500 pA
Drain Current-Off (ID(OFF))
1 µA
Drain-Source On Resistance (rds(ON))
150 Ω
Drain-Source On Voltage (VDS(ON))
0.6 V
Gate Leakage Current (IGSS)
500 pA
Gate Leakage Current (IGSS)
1 µA
Gate-Drain Voltage (VGD)
30 V
Gate-Source Breakdown Voltage (BVGSS)
30 V
Gate-Source Cutoff Voltage (VGS(OFF))
1 — 4 V
Gate-Source Forward Voltage (VGS(f))
1 V
Gate-Source Voltage (VGS)
30 V
Junction Temperature (Tj)
-65 — 200 °C
Power Dissipation (PD)
500 mW
Saturation Drain Current (IDSS)
5 — 25 mA
Static Drain-Source On Resistance (rDS(ON))
150 Ω
Storage Temperature (Tstg)
-65 — 200 °C
Turn Off Time (toff)
60 ns
Turn On Time (ton)
42 ns

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
2N5116 Box@2,000 Active 1V,4V,50mA,500mW Through-Hole JFET P Channel EAR99 8541.21.0095 PBFREE

Resources

2N5114-5116.PDF Device Datasheet
Analytical Test Report:Bond Wire Analytical Test Report
Analytical Test Report:Cap Analytical Test Report
Analytical Test Report:Header Analytical Test Report
Analytical Test Report:Header Assembly Analytical Test Report
Analytical Test Report:Pure Tin Solder Analytical Test Report
Material Composition:TO-18 Material Composition
Package Detail Document:TO-18 Package Detail Document
Process Change Notice:HEADER TO-72 Process Change Notice
Product Reliability Data:TO-18 Package Reliability Product Reliability Data
Spice Model:Spice Model 2N5116 Spice Model

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