2N5555

10mA,360mW Through-Hole JFET N Channel

Case Type: TO-92

Common Source Input Capacitance (Ciss)
5 pF
Common Source Reverse Transfer Capacitance (Crss)
1.2 pF
Continuous Gate Current (IG)
10 mA
Drain Current-Off (ID(OFF))
10 nA
Drain Current-Off (ID(OFF))
2 µA
Drain Leakage Current (IDGO)
1 nA
Drain Leakage Current (IDGO)
200 nA
Drain-Gate Voltage (VDG)
25 V
Drain-Source On Resistance (rds(ON))
150 Ω
Drain-Source On Voltage (VDS(ON))
1.5 V
Drain-Source Voltage (VDS)
25 V
Fall Time (tf)
10 ns
Gate Leakage Current (IGSS)
1 nA
Gate Leakage Current (IGSS)
200 nA
Gate-Source Breakdown Voltage (BVGSS)
25 V
Gate-Source Forward Voltage (VGS(f))
1 V
Gate-Source Voltage (VGS)
25 V
Junction Temperature (Tj)
-65 — 150 °C
Power Dissipation (PD)
360 mW
Rise Time (tr)
5 ns
Saturation Drain Current (IDSS)
15 mA
Static Drain-Source On Resistance (rDS(ON))
150 Ω
Storage Temperature (Tstg)
-65 — 150 °C
Turn-off Delay Time (tOFF)
15 ns
Turn-on Delay Time (tON)
5 ns

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
2N5555 Box@2,500 Discontinued, Stock Only 10mA,360mW Through-Hole JFET N Channel EAR99 8541.21.0095 PBFREE

Resources

2N5555.PDF Device Datasheet
Analytical Test Report:Copper Bonding Wire Analytical Test Report
Analytical Test Report:Copper Wire Analytical Test Report
Analytical Test Report:Epoxy Adhesive Analytical Test Report
Analytical Test Report:Green Epoxy Molding Compound Analytical Test Report
Analytical Test Report:Halogen Free Analytical Test Report
Analytical Test Report:Pure Tin Solder, Sn Analytical Test Report
Analytical Test Report:Tin Plating Analytical Test Report
Material Composition:TO-92 Material Composition
Package Detail Document:TO-92 Package Detail Document
Product Reliability Data:TO-92 Package Reliability Product Reliability Data

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