BSV80

1V,5V,50mA,350mW Through-Hole JFET N Channel

Case Type: TO-18

Common Source Input Capacitance (C_iss)

5 pF

Common Source Reverse Transfer Capacitance (C_rss)

10 pF

Continuous Gate Current (I_G)

50 mA

Drain Current-Off (I_D(OFF))

250 pA

Drain Current-Off (I_D(OFF))

500 nA

Drain-Gate Voltage (V_DG)

40 V

Drain-Source On Resistance (r_ds(ON))

60 Ω

Drain-Source On Voltage (V_DS(ON))

325 mV

Drain-Source Voltage (V_DS)

40 V

Gate Leakage Current (I_GSS)

250 pA

Gate Leakage Current (I_GSS)

500 nA

Gate Source Voltage (V_GS)

0.75 — 4 V

Gate-Source Cutoff Voltage (V_GS(OFF))

1 — 5 V

Gate-Source Voltage (V_GS)

40 V

Junction Temperature (T_j)

-65 — 175 °C

Power Dissipation (P_D)

350 mW

Saturation Drain Current (I_DSS)

10 mA

Storage Temperature (T_stg)

-65 — 175 °C

Thermal Resistance Junction-Ambient (Θ_JA)

430 °C/W

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
BSV80	Box@2,000		Discontinued	1V,5V,50mA,350mW Through-Hole JFET N Channel	EAR99	8541.21.0095	PBFREE


Item	Type
No matching documents found.
Analytical Test Report:Bond Wire	Analytical Test Report
Analytical Test Report:Cap	Analytical Test Report
Analytical Test Report:Header	Analytical Test Report
Analytical Test Report:Header Assembly	Analytical Test Report
BSV79_80.PDF	Device Datasheet
Material Composition:TO-18	Material Composition
Package Detail Document:TO-18	Package Detail Document
Product EOL Notice:JFETS	Product EOL Notice
Product Reliability Data:TO-18 Package Reliability	Product Reliability Data