CMPFJ175

3V,6V,50mA,225mW Surface mount JFET P Channel

Case Type: SOT-23

Continuous Gate Current (I_G)

50 mA

Drain-Gate Voltage (V_DG)

30 V

Gate Leakage Current (I_GSS)

1 nA

Gate-Source Breakdown Voltage (BV_GSS)

30 V

Gate-Source Cutoff Voltage (V_GS(OFF))

3 — 6 V

Gate-Source Voltage (V_GS)

30 V

Junction Temperature (T_j)

-65 — 150 °C

Power Dissipation (P_D)

225 mW

Saturation Drain Current (I_DSS)

7 — 60 mA

Static Drain-Source On Resistance (r_DS(ON))

125 Ω

Storage Temperature (T_stg)

-65 — 150 °C

Thermal Resistance Junction-Ambient (Θ_JA)

556 °C/W

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
CMPFJ175 BK	Box@3,500		Active	3V,6V,50mA,225mW Surface mount JFET P Channel	EAR99	8541.21.0095	PBFREE


Item	Type
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CMPFJ175-176.PDF	Device Datasheet
Material Composition:SOT-23	Material Composition
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Step File 3D Object:SOT-23	Step File 3D Object

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AEM stands ready to assist with your latest design endeavors as your trusted partner.