CMPFJ177

.8V,2.5V,50mA,225mW Surface mount JFET P Channel

Case Type: SOT-23

Continuous Gate Current (IG)
50 mA
Drain-Gate Voltage (VDG)
30 V
Gate Leakage Current (IGSS)
1 nA
Gate-Source Breakdown Voltage (BVGSS)
30 V
Gate-Source Cutoff Voltage (VGS(OFF))
0.8 — 2.5 V
Gate-Source Voltage (VGS)
30 V
Junction Temperature (Tj)
-65 — 150 °C
Power Dissipation (PD)
225 mW
Saturation Drain Current (IDSS)
1.5 — 20 mA
Static Drain-Source On Resistance (rDS(ON))
300 Ω
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient (ΘJA)
556 °C/W

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CMPFJ177 BK Box@3,500 Active .8V,2.5V,50mA,225mW Surface mount JFET P Channel EAR99 8541.21.0095 PBFREE
CMPFJ177 TR Tape & Reel@3,000 Active .8V,2.5V,50mA,225mW Surface mount JFET P Channel EAR99 8541.21.0095 PBFREE

Resources

Analytical Test Report:Copper Bond Wire Analytical Test Report
Analytical Test Report:Green Epoxy Molding Compound Analytical Test Report
Analytical Test Report:Green Epoxy Molding Compound Analytical Test Report
Analytical Test Report:Henkel 84-1LMISR4 Analytical Test Report
Material Composition:SOT-23 Material Composition
Package Detail Document:SOT-23 Package Detail Document
Product Reliability Data:SOT-23 Package Reliability Product Reliability Data
Step File 3D Object:SOT-23 Step File 3D Object

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