CMPFJ177

.8V,2.5V,50mA,225mW Surface mount JFET P Channel

Case Type: SOT-23

Continuous Gate Current (I_G)

50 mA

Drain-Gate Voltage (V_DG)

30 V

Gate Leakage Current (I_GSS)

1 nA

Gate-Source Breakdown Voltage (BV_GSS)

30 V

Gate-Source Cutoff Voltage (V_GS(OFF))

0.8 — 2.5 V

Gate-Source Voltage (V_GS)

30 V

Junction Temperature (T_j)

-65 — 150 °C

Power Dissipation (P_D)

225 mW

Saturation Drain Current (I_DSS)

1.5 — 20 mA

Static Drain-Source On Resistance (r_DS(ON))

300 Ω

Storage Temperature (T_stg)

-65 — 150 °C

Thermal Resistance Junction-Ambient (Θ_JA)

556 °C/W

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
CMPFJ177 BK	Box@3,500		Active	.8V,2.5V,50mA,225mW Surface mount JFET P Channel	EAR99	8541.21.0095	PBFREE
CMPFJ177 TR	Tape & Reel@3,000		Active	.8V,2.5V,50mA,225mW Surface mount JFET P Channel	EAR99	8541.21.0095	PBFREE


Item	Type
No matching documents found.
Analytical Test Report:Copper Bond Wire	Analytical Test Report
Analytical Test Report:Gold Bond Wire	Analytical Test Report
Analytical Test Report:Green Epoxy Molding Compound	Analytical Test Report
Analytical Test Report:Leadframe	Analytical Test Report
Analytical Test Report:Sn Plating	Analytical Test Report
Material Composition:SOT-23	Material Composition
Package Detail Document:SOT-23	Package Detail Document
Product Reliability Data:SOT-23 Package Reliability	Product Reliability Data
Step File 3D Object:SOT-23	Step File 3D Object