J211

2.5V,4.5V,10mA,625mW Through-Hole JFET N Channel

Case Type: TO-92

Continuous Gate Current (IG)
10 mA
Drain-Gate Voltage (VDG)
25 V
Gate Leakage Current (IGSS)
100 pA
Gate-Source Breakdown Voltage (BVGSS)
25 V
Gate-Source Cutoff Voltage (VGS(OFF))
2.5 — 4.5 V
Gate-Source Voltage (VGS)
25 V
Junction Temperature (Tj)
-55 — 150 °C
Power Dissipation (PD)
625 mW
Saturation Drain Current (IDSS)
7 — 20 mA
Storage Temperature (Tstg)
-55 — 150 °C

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
J211 Box@2,500 Active 2.5V,4.5V,10mA,625mW Through-Hole JFET N Channel EAR99 8541.21.0095 PBFREE
J211 APM Ammo@2,000 Active 2.5V,4.5V,10mA,625mW Through-Hole JFET N Channel EAR99 8541.21.0095 PBFREE
J211 APP Ammo@2,000 Active 2.5V,4.5V,10mA,625mW Through-Hole JFET N Channel EAR99 8541.21.0095 PBFREE

Resources

Analytical Test Report:Copper Bonding Wire Analytical Test Report
Analytical Test Report:Copper Wire Analytical Test Report
Analytical Test Report:Green Epoxy Molding Compound Analytical Test Report
Analytical Test Report:Lead Frame Analytical Test Report
Analytical Test Report:Pure Tin Solder, Sn Analytical Test Report
Analytical Test Report:Tin Plating Analytical Test Report
Material Composition:TO-92 Material Composition
Package Detail Document:TO-92 Package Detail Document
Product Reliability Data:TO-92 Package Reliability Product Reliability Data