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PN5033

.3V,2.5V,10mA,310mW Through-Hole JFET P Channel

Case Type: TO-92

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Technical Specifications

Similar Products with Selected Specifications
Common Source Input Capacitance (Ciss)
20 pF
Common Source Reverse Transfer Capacitance (Crss)
7 pF
Continuous Gate Current (IG)
10 mA
Drain-Gate Voltage (VDG)
10 V
Drain-Source Voltage (VDS)
10 V
Equivalent Input Noise Voltage (eN)
100 nV/√Hz
Forward Transconductance (gFS)
1 — 5 mS
Gate Leakage Current (IGSS)
10 nA
Gate-Source Breakdown Voltage (BVGSS)
10 V
Gate-Source Cutoff Voltage (VGS(OFF))
0.3 — 2.5 V
Gate-Source Voltage (VGS)
10 V
Junction Temperature (Tj)
-65 — 150 °C
Power Dissipation (PD)
310 mW
Saturation Drain Current (IDSS)
0.3 — 3.5 mA
Storage Temperature (Tstg)
-65 — 150 °C

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
PN5033 Box@2,500 Active .3V,2.5V,10mA,310mW Through-Hole JFET P Channel EAR99 8541.21.0095 PBFREE

Resources

Item Type
Analytical Test Report:Copper Bonding Wire Analytical Test Report
Analytical Test Report:Copper Wire Analytical Test Report
Analytical Test Report:Epoxy Adhesive Analytical Test Report
Analytical Test Report:Green Epoxy Molding Compound Analytical Test Report
Analytical Test Report:Halogen Free Analytical Test Report
Analytical Test Report:Pure Tin Solder, Sn Analytical Test Report
Analytical Test Report:Tin Plating Analytical Test Report
Material Composition:TO-92 Material Composition
Package Detail Document:TO-92 Package Detail Document
PN5033.PDF Device Datasheet
Process Change Notice:P-CHANNEL JFETS Process Change Notice
Product Reliability Data:TO-92 Package Reliability Product Reliability Data

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