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Central Semiconductor announces the introduction of several new 650V Super Junction N-Channel MOSFETs designed for high-voltage, fast-switching applications. The latest additions are available in TO-220FP packaging.

The new GaN FETs are engineered for maximum efficiency and speed. The devices are ideally suited for a wide range of applications, including wireless charging for defense, aerospace, healthcare, and consumer electronics markets.

These through-hole hyper-fast recovery rectifiers packaged in the TO-247 provide outstanding performance and couple perfectly with Centrals upcoming line of Super junction MOSFETs.

Central Semiconductor has launched its highly anticipated Spacellite series with two space-grade devices. Both the CSLLDM22011-225F and CSLCDM22011-225F are N-Channel MOSFETs rated at 225V 11A, and are expected to be major contributors to the satellite market and other Hi-Rel solutions.

Central Semiconductor Corp. introduces its new line of Zero Temperature Coefficient (ZTC) current limiting diodes (CLDs) packaged in the DPAK case. The new CDCLD series of devices is designed to meet designers' requirements to maintain a constant current over a wide voltage range, with the added benefit of extreme stability over a wide temperature range.

Central Semiconductor Corp., introduces its CAK3-012C & CAK6-042C series of 5G bi-directional transient voltage suppressors (TVS). These TVS devices are designed to meet designers requirements for protection of voltage sensitive components from high energy transients that are most directly associated with lightning strikes and inductive load switching.

Central Semiconductor introduces its latest 100V low profile Schottky rectifiers: the 3A CMDFSHC3-100 and the 5A CMDFSHC5-100. These energy efficient devices are packaged in the low profile SMC DFN surface mount case, and utilize highly reliable passivated silicon die.

Central Semiconductor introduces the CBRDFA4-100, a 4.0A, 1000V full wave bridge rectifier with a glass passivated die. This device features the low profile (1.55mm) BR DFN-A package.

Central Semiconductor has introduced its new portfolio of Silicon Carbide Schottky Rectifier die. Optimized for high temperature applications, these devices are available in both 650V and 1200V, with a current range of 4A to 30A for 650V devices, and 2A and 50A for 1,200V devices.

Central Semiconductor has released its new adjustable current limiting diode, the CMJA5050. This 50V device features adjustable current regulation from 50mA to 80mA, and is packaged in the new DFN123F package.

Central's latest article examines the how the CBRDFSH Schottky Bridge Rectifiers are the ideal choice for power over ethernet (PoE) devices.

SAN DIEGO, Calif., December 18, 2019 — AEM, Inc. announced that it is a recipient of a 4-Star Supplier Excellence Award for 2019 by Raytheon's Integrated Defense Systems (IDS) business.