Home / Sample Kits: GaN FETs

Sample Kits: GaN FETs

Request a sample kit

Combining high voltage capability with low rDS(ON), our N-Channel GaN FETs are designed for high frequency applications with high standards of efficiency. These GaN FETs are designed for use in power modules and fast-charging power circuit designs.

Samples available for N-Ch GaN FETs

CCSPG0420N

VDS = 40V max
ID = 20A max
rDS(ON) = 4.0mΩ max
Qg = 15.8nC typ
CSP2X2
Marking Code: CSP 0420
Datasheet

CCSPG0450N

VDS = 40V max
ID = 50A max
rDS(ON) = 1.5mΩ max
Qg = 28nC typ
CSP5X4
Marking Code: CSP 0450
Datasheet

CCSPG1060N

VDS = 100V max
ID = 60A max
rDS(ON) = 5.5mΩ max
Qg = 9.2nC typ
CSP3.5X2
Marking Code: CSP 1060 D/C
Datasheet

CCSPG1560N

VDS = 150V max
ID = 60A max
rDS(ON) = 7.0mΩ max
Qg = 13nC typ
CSP4X6
Marking Code: CEN CSP 1560 L/C D/C
Datasheet

CCSPG1510N

VDS = 150V max
ID = 100A max
rDS(ON) = 3.9mΩ max
Qg =  20nC typ
CSP4X6
Marking Code: CEN CSP 1510 L/C D/C
Datasheet



CDF56G6511N

VDS = 650V max
ID = 11.5A max
rDS(ON) = 190mΩ max
Qg = 2.8nC typ
DFN5X6A
Marking Code: C6511 5X6 L/C D/C
Datasheet

CDF56G6517N

VDS = 650V max
ID = 17A max
rDS(ON) = 140mΩ max
Qg = 3.5nC typ
DFN5X6A
Marking Code: C6517 5X6 L/C D/C
Datasheet

CDFG6511N

VDS = 650V max
ID = 11.5A max
rDS(ON) = 190mΩ max
Qg = 2.8nC typ
DFN8X8
Marking Code: C6511 L/C D/C
Datasheet

CDFG6517N

VDS = 650V max
ID = 17A max
rDS(ON) = 140mΩ max
Qg = 3.5nC typ
DFN8X8
Marking Code: C6517 L/C D/C
Datasheet

CDFG6558N

VDS = 650V max
ID = 29A max
rDS(ON) = 80mΩ max
Qg = 6.2nC typ
DFN8X8
Marking Code: C6558 8X8 L/C D/C
Datasheet

CDF56G7032N

VDS = 700V max
ID = 18A max
rDS(ON) = 140mΩ max
Qg = 3.5nC typ
DFN5X6A
Marking Code: C7032 L/C D/C
Datasheet

Read more