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Sample Kits: SiC MOSFETs

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Our SiC MOSFETs are designed for high-speed switching applications that require low conduction losses. They demonstrate consistent performance across a broad operating temperature range of -55°C to +175°C for both DC and dynamic characteristics, featuring low power loss under high temperature.

Samples available for SiC MOSFETs

CDMS24720-120

VDS = 1200V max
ID = 37A max
rDS(ON) = 20mΩ max
VGS(th) = 2.6V typ
TO-247
Marking Code: 
20-120
Datasheet



CDMS24720-170

VDS = 1700V max
ID = 37A max
rDS(ON) = 20mΩ max
VGS(th) = 2.6V typ
TO-247
Marking Code: 
20-170
Datasheet



CDMS24740-120

VDS = 1200V max
ID = 26A max
rDS(ON) = 40mΩ max
VGS(th) = 2.5V typ
TO-247
Marking Code: 
40-120
Datasheet



CDMS24740-170

VDS = 1700V max
ID = 26A max
rDS(ON) = 40mΩ max
VGS(th) = 2.4V typ
TO-247
Marking Code: 
40-170
Datasheet



CDMS24760-120

VDS = 1200V max
ID = 21A max
rDS(ON) = 60mΩ max
VGS(th) = 2.6V typ
TO-247
Marking Code: 
60-120
Datasheet

CDMS24783-120

VDS = 1200V max
ID = 18A max
rDS(ON) = 83mΩ max
VGS(th) = 2.4V typ
TO-247
Marking Code: 
83-120
Datasheet


CDMS24760-170

VDS = 1700V max
ID = 21A max
rDS(ON) = 60mΩ max
VGS(th) = 2.6V typ
TO-247
Marking Code: 
60-170
Datasheet

CDMS24780-170

VDS = 1700V max
ID = 18A max
rDS(ON) = 80mΩ max
VGS(th) = 2.6V typ
TO-247
Marking Code: 
80-170
Datasheet


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